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quality Durable 100V P Channel Fast Switching MOSFET HUASHUO HSH80P10 with Excellent RDS ON and Gate Charge factory
quality Durable 100V P Channel Fast Switching MOSFET HUASHUO HSH80P10 with Excellent RDS ON and Gate Charge factory

Durable 100V P Channel Fast Switching MOSFET HUASHUO HSH80P10 with Excellent RDS ON and Gate Charge

Key Attributes
Model Number: HSH80P10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
20mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
50pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
11.66nF@50V
Pd - Power Dissipation:
210W
Gate Charge(Qg):
180nC@10V
Mfr. Part #:
HSH80P10
Package:
TO-263
Product Description

Product Overview

The HSH80P10 is a P-Channel, 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability. Key advantages include excellent CdV/dt effect decline and advanced high cell density Trench technology. It is recommended for portable equipment and battery-powered systems.

Product Attributes

  • Brand: HSH (SMEI)
  • Technology: Advanced Trench MOSFET
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Model Parameter Rating/Conditions Unit Min. Typ. Max.
HSH80P10 Drain-Source Voltage (VDS) V -100
Gate-Source Voltage (VGS) V ±20
Continuous Drain Current, VGS @ -10V (TC=25) A -80
Continuous Drain Current, VGS @ -10V (TC=100) A -57
Pulsed Drain Current (IDM)2 A -225
Single Pulse Avalanche Energy (EAS)3 mJ 310
Total Power Dissipation (PD@TC=25)4 W 210
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Thermal Resistance Junction-Ambient (RJA)1 /W 62
Thermal Resistance Junction-Case (RJC)1 /W 0.7
Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=-250uA V -100
Static Drain-Source On-Resistance (RDS(ON),typ)2 VGS=-10V , ID=-40A m 20 28
Static Drain-Source On-Resistance (RDS(ON),typ)2 VGS=-4.5V , ID=-40A m 24 32
HSH80P10 Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =-250uA V -1.0 -1.8 -3
Drain-Source Leakage Current (IDSS) VDS=-100V , VGS=0V , TJ=25 uA -50
Gate-Source Leakage Current (IGSS) VGS=±20V , VDS=0V nA ±100
Gate Resistance (Rg) VGS=0V , VDS=0V,F=1MHz 4.7
Forward Transconductance (gfs) VDS=-10V , ID=-10A S 32
Total Gate Charge (Qg) VDS=-50V , VGS=-10V , ID=-20A nC 180
Gate-Source Charge (Qgs) nC 44
Gate-Drain Charge (Qgd) nC 29
Turn-On Delay Time (Td(on)) VDD=-50V , VGS=-10V , RG=4, ID=-20A ns 16
Rise Time (Tr) ns 91
HSH80P10 Turn-Off Delay Time (Td(off)) ns 208
Fall Time (Tf) ns 110
Input Capacitance (Ciss) VDS=-50V , VGS=0V , f=1MHz pF 11660
Output Capacitance (Coss) pF 289
HSH80P10 Reverse Transfer Capacitance (Crss) pF 99
Continuous Source Current (IS)1,5 VG=VD=0V , Force Current A -80
Diode Forward Voltage (VSD)2 VGS=0V , IS=-40A , TJ=25 V -1.3
HSH80P10 Reverse Recovery Time (trr) IF=-40A , di/dt=-100A/s , TJ=25 nS 31.2
HSH80P10 Reverse Recovery Charge (Qrr) nC 45

2410121631_HUASHUO-HSH80P10_C7543772.pdf
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