Compact low voltage n channel mosfet Guangdong Hottech AO3400 ideal for pwm load switch applications
Key Attributes
Model Number:
AO3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-
RDS(on):
28mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)):
1.45V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Input Capacitance(Ciss):
630pF
Output Capacitance(Coss):
75pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
AO3400
Package:
SOT-23
Product Description
Product Overview
The AO3400 is a low voltage N-channel MOSFET designed for high-efficiency applications. It features ultra-low on-resistance, making it suitable for PWM and load switch applications. This surface mount device is housed in a compact SOT-23 package.
Product Attributes
- Brand: HOTTECH
- Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Package: SOT-23
- Material: Molded Plastic
- Flammability Classification: UL 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| MAXIMUM RATINGS | ||||
| Drain-source voltage | VDS | 30 | V | |
| Gate-source voltage | VGS | 12 | V | |
| Continuous drain current | ID | 5.8 | A | TA=25C |
| Continuous drain current | ID | 4.9 | A | TA=70C |
| Pulsed drain current | IDM* | 30 | A | |
| Power dissipation | PD | 1.40 | W | TA=25C |
| Power dissipation | PD | 0.9 | W | TA=70C |
| Thermal resistance from Junction to ambient | RJA | 125 | C/W | |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TSTG | -55 ~+150 | C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source breakdown voltage | V(BR)DSS* | 30 | V | VGS=0V, ID=250A |
| Zero gate voltage drain current | IDSS* | 1 | uA | VDS=30V, VGS=0V |
| Gate-body leakage current | IGSS* | 100 | nA | VDS=0V, VGS=12V |
| Gate-threshold voltage | VGS(th)* | 0.65 - 1.45 | V | VDS=VGS, ID=250A |
| Drain-source on-resistance | RDS(ON)* | 18 - 28 | m | VGS=10V, ID=5.8A |
| Drain-source on-resistance | RDS(ON)* | 19 - 33 | m | VGS=4.5V, ID=5A |
| Drain-source on-resistance | RDS(ON)* | 24 - 52 | m | VGS=2.5V, ID=4A |
| On-State Drain Current | ID(ON)* | 30 | A | VDS=5V, VGS=4.5V |
| Forward transconductance | gFS | 33 | S | VDS=5V, ID=5.8A |
| Gate resistance | Rg | 1.5 - 4.5 | VGS=0V, VDS=0V, f=1MHz | |
| Input capacitance | Ciss | 630 | pF | VDS=15V, VGS=0V, f=1MHz |
| Output capacitance | Coss | 75 | pF | VDS=15V, VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 50 | pF | VDS=15V, VGS=0V, f=1MHz |
| Turn-on delay time | td(on) | 3 | nS | VDS=15V, VGS=10V, RGEN=3, RL=2.6 |
| Turn-on rise time | tr | 2.5 | nS | VDS=15V, VGS=10V, RGEN=3, RL=2.6 |
| Turn-off delay time | td(off) | 25 | nS | VDS=15V, VGS=10V, RGEN=3, RL=2.6 |
| Turn-off fall time | tf | 4 | nS | VDS=15V, VGS=10V, RGEN=3, RL=2.6 |
| Total gate charge | Qg | 6 - 7 | nC | VDS=15V,VGS=4.5V,ID=5.8A |
| Gate-source charge | Qgs | 1.3 | nC | VDS=15V,VGS=4.5V,ID=5.8A |
| Gate-drain charge | Qg d | 1.8 | nC | VDS=15V,VGS=4.5V,ID=5.8A |
| Diode forward voltage | VSD | 0.7 - 1 | V | IS=1A, VGS=0V |
| Diode forward current | IS | 2 | A | |
| Body Diode Reverse Recovery Time | trr | 8.5 | nS | IF=5.8A, dI/dt=100A/ms |
| Body Diode Reverse Recovery Charge | Qrr | 2.6 | nC | IF=5.8A, dI/dt=100A/ms |
2410122025_Guangdong-Hottech-AO3400_C181090.pdf
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