Power Transistor Hangzhou Silan Microelectronics SVS20N60FJD2 N Channel 600V 20A TO 220FJ Package
Key Attributes
Model Number:
SVS20N60FJD2
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
190mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF@100V
Number:
1 N-channel
Input Capacitance(Ciss):
1.174nF@100V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
SVS20N60FJD2
Package:
TO-220F-3
Product Description
SVS20N60FJ(K)(T)(PN)(S)(P7)D2 DP MOS Power Transistor
The SVS20N60FJ(K)(T)(PN)(S)(P7)D2 is an N-channel enhancement mode high voltage power MOSFET manufactured using Silan's DP MOS technology. It offers low conduction and switching losses, enabling high efficiency, high power density, and improved thermal performance in power converters. This device is widely applicable in hard/soft switching topologies.
Product Attributes
- Brand: Silan Microelectronics
- Origin: China
Technical Specifications
| Product Name | Package Type | Marking | Environmental Level | Package Form | VDS (V) | VGS (V) | RDS(on) () @ VGS=10V, ID=10A (Typ) | ID (A) @ TC=25C | PD (W) @ TC=25C |
| SVS20N60FJD2 | TO-220FJ-3L | 20N60FJD2 | Halogen-free | Tubo | 600 | ±30 | 0.16 | 20 | 45 |
| SVS20N60KD2 | TO-262-3L | 20N60KD2 | Halogen-free | Tubo | 600 | ±30 | 0.16 | 20 | 150 |
| SVS20N60TD2 | TO-220-3L | 20N60TD2 | Halogen-free | Tubo | 600 | ±30 | 0.16 | 20 | 150 |
| SVS20N60PND2 | TO-3P | 20N60PND2 | Lead-free | Tubo | 600 | ±30 | 0.16 | 20 | 200 |
| SVS20N60SD2 | TO-263-2L | 20N60SD2 | Halogen-free | Tubo | 600 | ±30 | 0.16 | 20 | 150 |
| SVS20N60SD2TR | TO-263-2L | 20N60SD2 | Halogen-free | Tape & Reel | 600 | ±30 | 0.16 | 20 | 150 |
| SVS20N60P7D2 | TO-247-3L | 20N60P7D2 | Lead-free | Tubo | 600 | ±30 | 0.16 | 20 | 200 |
2511110935_Hangzhou-Silan-Microelectronics-SVS20N60FJD2_C2761792.pdf
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