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quality high cell density MOSFET HUASHUO HSBA8024A designed for synchronous rectification and fast switching factory
quality high cell density MOSFET HUASHUO HSBA8024A designed for synchronous rectification and fast switching factory

high cell density MOSFET HUASHUO HSBA8024A designed for synchronous rectification and fast switching

Key Attributes
Model Number: HSBA8024A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
122A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
278pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
5.58nF@15V
Pd - Power Dissipation:
156W
Gate Charge(Qg):
84nC@10V
Mfr. Part #:
HSBA8024A
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA8024A is a high cell density trenched N-channel MOSFET designed for fast switching applications, offering excellent RDS(ON) and gate charge for synchronous rectification. This RoHS and Halogen-Free compliant device is 100% EAS guaranteed with full function reliability approved, featuring super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Compliance: RoHS and Halogen-Free
  • Reliability: 100% EAS Guaranteed
  • Device Type: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 80 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1,6 122 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1,6 78.6 A
IDM Pulsed Drain Current2 300 A
EAS Single Pulse Avalanche Energy3 246.4 mJ
IAS Avalanche Current 70.2 A
PD@TC=25 Total Power Dissipation4 156 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 0.8 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- 6.5 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 --- 4 V
IDSS Drain-Source Leakage Current VDS=64V , VGS=0V , TJ=25 --- 1 uA
IDSS Drain-Source Leakage Current VDS=64V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A 50 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 1.4 ---
Qg Total Gate Charge (10V) VDS=64V , VGS=10V , ID=30A 84 --- nC
Qgs Gate-Source Charge 28 --- nC
Qgd Gate-Drain Charge 29 --- nC
Td(on) Turn-On Delay Time VDD=40V , VGS=10V , RG=3.3, ID=30A 38 --- ns
Tr Rise Time 73 --- ns
Td(off) Turn-Off Delay Time 51 --- ns
Tf Fall Time 26 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 5580 --- pF
Coss Output Capacitance 571 --- pF
Crss Reverse Transfer Capacitance 278 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 122 A
VSD Diode Forward Voltage2 VGS=0V , IS=A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=30A , dI/dt=100A/s , TJ=25 27 --- nS
Qrr Reverse Recovery Charge 28 --- nC
Ordering Information
Part Number Package code Packaging
HSBA8024A PRPAK5*6 3000/Tape&Reel

2410121653_HUASHUO-HSBA8024A_C2828503.pdf
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