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quality HUASHUO HSM4094 N channel MOSFET featuring advanced trench technology for power management solutions factory
quality HUASHUO HSM4094 N channel MOSFET featuring advanced trench technology for power management solutions factory

HUASHUO HSM4094 N channel MOSFET featuring advanced trench technology for power management solutions

Key Attributes
Model Number: HSM4094
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
24A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
71pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
2.65nF@20V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
22.7nC@4.5V
Mfr. Part #:
HSM4094
Package:
SOP-8
Product Description

Product Overview

The HSM4094 is an N-channel, 40V fast-switching MOSFET designed for high-efficiency applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and or-ing circuits. This RoHS and Halogen-Free compliant component is 100% UIS and EAS tested, ensuring reliability and performance.

Product Attributes

  • Brand: HS-Semi
  • Technology: Advanced Trench Technology
  • Compliance: RoHS and Halogen-Free Compliant
  • Testing: 100% UIS Tested, 100% EAS Guaranteed

Technical Specifications

Model Description Rating Units
HSM4094 Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current, VGS @ 10V (TC=25°C) 24 A
Continuous Drain Current, VGS @ 10V (TC=100°C) 19 A
Pulsed Drain Current (IDM) 70 A
Single Pulse Avalanche Energy (EAS) 80 mJ
Total Power Dissipation (PD@TA=25°C) 3 W
Storage Temperature Range (TSTG) -55 to 150 °C
Operating Junction Temperature Range (TJ) -55 to 150 °C
Thermal Resistance Junction-Ambient (RθJA) --- 75 °C/W
Thermal Resistance Junction-Case (RθJC) --- 40 °C/W
Drain-Source Breakdown Voltage (BVDSS) (VGS=0V, ID=250uA) 40 --- V
Static Drain-Source On-Resistance (RDS(ON),typ) (VGS=10V, ID=20A) --- 2.5 mΩ
Static Drain-Source On-Resistance (RDS(ON)) (VGS=4.5V, ID=15A) HSM4094 --- 3.8 5.3 mΩ
Gate Threshold Voltage (VGS(th)) (VGS=VDS, ID=250uA) HSM4094 1.2 1.7 2.2 V
Drain-Source Leakage Current (IDSS) (VDS=32V, VGS=0V, TJ=25°C) HSM4094 --- --- 1 uA
Drain-Source Leakage Current (IDSS) (VDS=32V, VGS=0V, TJ=55°C) HSM4094 --- --- 5 uA
Gate-Source Leakage Current (IGSS) (VGS=±20V, VDS=0V) HSM4094 --- --- ±100 nA
Forward Transconductance (gfs) (VDS=5V, ID=20A) HSM4094 --- 75 --- S
Gate Resistance (Rg) (VDS=0V, VGS=0V, f=1MHz) HSM4094 --- 1.5 --- Ω
Total Gate Charge (Qg) (4.5V) (VDS=20V, VGS=4.5V, ID=20A) HSM4094 --- 22.7 --- nC
Gate-Source Charge (Qgs) HSM4094 --- 7.5 --- nC
Gate-Drain Charge (Qgd) HSM4094 --- 5.5 --- nC
Turn-On Delay Time (td(on)) (VDD=20V, VGS=10V, RG=3Ω, ID=20A) HSM4094 --- 10 --- ns
Rise Time (tr) HSM4094 --- 5 --- ns
Turn-Off Delay Time (td(off)) HSM4094 --- 33 --- ns
Fall Time (tf) HSM4094 --- 6.5 --- ns
Input Capacitance (Ciss) (VDS=20V, VGS=0V, f=1MHz) HSM4094 --- 2650 --- pF
Output Capacitance (Coss) (VDS=20V, VGS=0V, f=1MHz) HSM4094 --- 899 --- pF
Reverse Transfer Capacitance (Crss) (VDS=20V, VGS=0V, f=1MHz) HSM4094 --- 71 --- pF
Continuous Source Current (IS) (VG=VD=0V, Force Current) HSM4094 --- --- 24 A
Diode Forward Voltage (VSD) (VGS=0V, IS=1A, TJ=25°C) HSM4094 --- --- 1 V

Applications

  • SMPS Synchronous Rectification
  • DC/DC Converters
  • Or-ing

Ordering Information

Part Number Package Code Packaging
HSM4094 SOP-8 4000/Tape&Reel

2410121656_HUASHUO-HSM4094_C700989.pdf

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