Low voltage n channel mosfet Guangdong Hottech AO3402 with ultra low on resistance in sot 23 package
Key Attributes
Model Number:
AO3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
45pF
Input Capacitance(Ciss):
285pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
AO3402
Package:
SOT-23
Product Description
Product Overview
The AO3402 is an N-channel, low voltage MOSFET designed for PWM and load switch applications. It features ultra-low on-resistance and is available in a surface-mount SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-source voltage | VDS | 30 | V | |
| Gate-source voltage | VGS | 12 | V | |
| Continuous drain current | ID | 4 | A | TA=25C |
| ID | 3.2 | A | TA=70C | |
| Pulsed drain current | IDM* | 15 | A | |
| Power dissipation | PD | 1.40 | W | TA=25C |
| PD | 0.9 | W | TA=70C | |
| Thermal resistance from Junction to ambient | RJA | 125 | C/W | |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TSTG | -55 ~+150 | C | |
| Drain-Source breakdown voltage | V(BR)DSS* | 30 | V | VGS=0V, ID=250A |
| Zero gate voltage drain current | IDSS* | 1 | uA | VDS=30V, VGS=0V |
| Gate-body leakage current | IGSS* | 100 | nA | VDS=0V, VGS=12V |
| Gate-threshold voltage | VGS(th)* | 0.5 - 1.5 | V | VDS=VGS, ID=250A |
| Drain-source on-resistance | RDS(ON)* | 43 - 52 | m | VGS=10V, ID=4A |
| RDS(ON)* | 47 - 65 | m | VGS=4.5V, ID=3A | |
| RDS(ON)* | 60 - 85 | m | VGS=2.5V, ID=2A | |
| On-State Drain Current | ID(ON) | 15 | A | VDS=5V, VGS=10V |
| Forward transconductance | gFS | 14 | S | VDS=5V, ID=3.6A |
| Gate resistance | Rg | 2.1 - 6.5 | VGS=0V, VDS=0V, f=1MHz | |
| Input capacitance | Ciss | 185 - 285 | pF | VDS=15V, VGS=0V, f=1MHz |
| Output capacitance | Coss | 25 - 45 | pF | VDS=15V, VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 10 - 25 | pF | VDS=15V, VGS=0V, f=1MHz |
| Turn-on delay time | td(on) | 3.5 | nS | VDS=15V, VGS=10V, RGEN=3, RL=3.75 |
| Turn-on rise time | tr | 1.5 | nS | |
| Turn-off delay time | td(off) | 17.5 | nS | |
| Turn-off fall time | tf | 2.5 | nS | |
| Total gate charge | Qg | 10 - 12 | nC | VDS=15V,VGS=10V,ID=4A |
| Gate-source charge | Qgs | 0.95 | nC | |
| Gate-drain charge | Qgd | 1.6 | nC | |
| Diode forward voltage | VSD | 0.75 - 1 | V | IS=1A, VGS=0V |
| Diode forward current | IS | 1.5 | A | |
| Body Diode Reverse Recovery Time | trr | 8.5 - 11 | nS | IF=4A, dI/dt=100A/us |
| Body Diode Reverse Recovery Charge | Qrr | 2.6 - 3.5 | nC | IF=4A, dI/dt=100A/us |
2410122025_Guangdong-Hottech-AO3402_C181092.pdf
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