Low Voltage P Channel MOSFET Guangdong Hottech HKTQ30P03 for Load Switch and Converter Designs
Key Attributes
Model Number:
HKTQ30P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
RDS(on):
7.4mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
P-Channel
Pd - Power Dissipation:
32W
Gate Charge(Qg):
81nC@10V
Mfr. Part #:
HKTQ30P03
Package:
PDFN3333
Product Description
HKTQ30P03 Low Voltage P-Channel MOSFET
The HKTQ30P03 is a P-channel MOSFET designed for low power DC to DC converter and load switch applications. It features ultra-low on-resistance, making it highly efficient for these uses. This surface mount device is housed in a PDFN3333 package.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
- Origin: Not specified
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Marking: Q30P03
- Email: hkt@heketai.com
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current | -60 | A | |||
| ID@TC=100 | Continuous Drain Current | -30 | A | |||
| IDM | Pulsed Drain Current | -90 | A | |||
| EAS | Single Pulse Avalanche Energy | 64 | mJ | |||
| IAS | Avalanche Current | 30 | A | |||
| PD@TC=25 | Total Power Dissipation | 32 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10 V , ID=10A | 7.4 | 10 | m | |
| VGS=4.5V , ID=10A | 11.4 | 13.5 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | -1.0 | -1.6 | -2.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=125 | -10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.8 | |||
| Qg | Total Gate Charge (10V) | VDS=15V , VGS=10V , ID=20A | 81 | nC | ||
| Qgs | Gate-Source Charge | 12 | ||||
| Qgd | Gate-Drain Charge | 9.7 | ||||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3, ID=15A | 17 | ns | ||
| Tr | Rise Time | 21 | ns | |||
| Td(off) | Turn-Off Delay Time | 36 | ns | |||
| Tf | Fall Time | 15 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 3980 | pF | ||
| Coss | Output Capacitance | 450 | pF | |||
| Crss | Reverse Transfer Capacitance | 420 | pF | |||
2507111630_Guangdong-Hottech-HKTQ30P03_C49238169.pdf
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