Durable N channel MOSFET Guangdong Hottech HKTD90N03 designed for power switching and drive circuits
Key Attributes
Model Number:
HKTD90N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
240pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2nF@15V
Pd - Power Dissipation:
90W
Mfr. Part #:
HKTD90N03
Package:
TO-252
Product Description
Product Overview
The HKTD90N03 is an N-channel MOSFET designed for efficient power switching applications. It features low on-resistance, fast switching speed, and is easily designed for drive circuits and paralleling. This MOSFET is suitable for various applications requiring reliable power management.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Model: HKTD90N03
- Material: Molded Plastic (UL flammability Classification Rating: 94V-0)
- Package: PDFN5x6 (TO-252 Equivalent)
- Origin: China (implied by company name and email domain)
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| Drain-source voltage | VDS | 30 | V | |||
| Gate-source voltage | VGS | ±20 | V | |||
| Continuous drain current | ID | 90 | A | TA = 25°C | ||
| Power dissipation | PD | 90 | W | TA = 25°C | ||
| Thermal resistance Junction to ambient | RθJA | 18 | °C/W | |||
| Junction and Storage temperature | TJ,TSTG | -55 | +150 | °C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source breakdown voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250uA | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=30V, VGS=0V | ||
| Gate-body leakage current | IGSS | ±100 | nA | VDS=0V, VGS=±20V | ||
| Gate-threshold voltage (note 1) | VGS(th) | V | VDS=20V,ID=250μA | |||
| Drain-source on-resistance (note 1) | RDS(ON) | 5 | 7 | mΩ | VGS=10V, ID=20A / VGS=4.5V, ID=10A | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | 2000 | pF | VDS=15V, VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 320 | pF | VDS=15V, VGS=0V, f=1MHz | ||
| Reverse transfer capacitance | Crss | 240 | pF | VDS=15V, VGS=0V, f=1MHz | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | 13 | nS | VDD=15V. VGS=10V,ID =30A Rg=3Ω | ||
| Turn-on rise time | tr | 36 | nS | VDD=15V. VGS=10V,ID =30A Rg=3Ω | ||
| Turn-off delay time | td(off) | 42 | nS | VDD=15V. VGS=10V,ID =30A Rg=3Ω | ||
| Turn-off fall time | tf | 16 | nS | VDD=15V. VGS=10V,ID =30A Rg=3Ω | ||
2410121946_Guangdong-Hottech-HKTD90N03_C5190213.pdf
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