switching P channel MOSFET Hangzhou Silan Microelectronics SVD9Z24NT for power amplifier applications
Key Attributes
Model Number:
SVD9Z24NT
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+175℃
RDS(on):
175mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 P-Channel
Output Capacitance(Coss):
135pF
Input Capacitance(Ciss):
447pF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SVD9Z24NT
Package:
TO-220
Product Description
Product Overview
The SVD9Z24NT is a P-channel enhancement mode power MOS field-effect transistor manufactured using Silan's planar VDMOS process. Engineered for minimal on-state resistance and superior switching performance, it excels in high-energy pulse handling in avalanche and commutation modes. This device is ideal for push-pull amplifiers, high-side switching circuits, and CMOS power amplifiers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free
- Packing Type: Tube
Technical Specifications
| Characteristics | Symbol | Ratings | Unit | Test Conditions | Min. | Typ. | Max. |
| ABSOLUTE MAXIMUM RATINGS | |||||||
| Drain-Source Voltage | VDS | -55 | V | (TC=25C unless otherwise noted) | |||
| Gate-Source Voltage | VGS | 20 | V | (TC=25C unless otherwise noted) | |||
| Drain Current TC=25C | ID | -12 | A | (TC=25C unless otherwise noted) | |||
| Drain Current TC=100C | ID | -8.5 | A | (TC=25C unless otherwise noted) | |||
| Drain Current Pulsed | IDM | -48 | A | (TC=25C unless otherwise noted) | |||
| Power Dissipation(TC=25C) | PD | 45 | W | (TC=25C unless otherwise noted) | |||
| Derate above 25C | 0.36 | W/C | (TC=25C unless otherwise noted) | ||||
| Single Pulsed Avalanche Energy (Note 1) | EAS | 106 | mJ | (TC=25C unless otherwise noted) | |||
| Operation Junction Temperature Range | TJ | -55+175 | C | (TC=25C unless otherwise noted) | |||
| Storage Temperature Range | Tstg | -55+175 | C | (TC=25C unless otherwise noted) | |||
| THERMAL CHARACTERISTICS | |||||||
| Thermal Resistance, Junction-to-Case | RJC | 2.78 | C/W | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | C/W | ||||
| ELECTRICAL CHARACTERISTICS | |||||||
| Drain -Source Breakdown Voltage | BVDSS | -55 | V | VGS=0V, ID=-250A | |||
| Drain-Source Leakage Current | IDSS | -25 | A | VDS=-55V, VGS=0V | |||
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V | |||
| Gate Threshold Voltage | VGS(th) | -2.0 | V | VGS=VDS, ID=-250A | -4.0 | ||
| Static Drain-Source On State Resistance | RDS(on) | 175 | m | VGS=-10V, ID=-7.2A | |||
| Input Capacitance | Ciss | 447 | pF | VDS=-25V, VGS=0V, f=1.0MHz | |||
| Output Capacitance | Coss | 135 | pF | VDS=-25V, VGS=0V, f=1.0MHz | |||
| Reverse Transfer Capacitance | Crss | 30 | pF | VDS=-25V, VGS=0V, f=1.0MHz | |||
| Turn-on Delay Time | td(on) | 8.47 | ns | VDD=-28V,VGS=-10V, RG=24,ID=-7.2A (Note 2,3) | |||
| Turn-on Rise Time | tr | 41.2 | ns | VDD=-28V,VGS=-10V, RG=24,ID=-7.2A (Note 2,3) | |||
| Turn-off Delay Time | td(off) | 30 | ns | VDD=-28V,VGS=-10V, RG=24,ID=-7.2A (Note 2,3) | |||
| Turn-off Fall Time | tf | 20.2 | ns | VDD=-28V,VGS=-10V, RG=24,ID=-7.2A (Note 2,3) | |||
| Total Gate Charge | Qg | 13 | nC | VDS=-44V,VGS=-10V, ID=-7.2A (Note 2,3) | |||
| Gate-Source Charge | Qgs | 3.25 | nC | VDS=-44V,VGS=-10V, ID=-7.2A (Note 2,3) | |||
| Gate-Drain Charge | Qg | 5.3 | nC | VDS=-44V,VGS=-10V, ID=-7.2A (Note 2,3) | |||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | |||||||
| Continuous Source Current | IS | -12 | A | ||||
| Pulsed Source Current | ISM | -48 | A | ||||
| Diode Forward Voltage | VSD | -1.6 | V | IS=-7.2A, VGS=0V | |||
| Reverse Recovery Time | Trr | 50.5 | ns | IS=-7.2A, VGS=0V, dIF/dt=100A/s (Note 2) | |||
| Reverse Recovery Charge | Qrr | 0.11 | C | IS=-7.2A, VGS=0V, dIF/dt=100A/s (Note 2) | |||
2501091110_Hangzhou-Silan-Microelectronics-SVD9Z24NT_C2761788.pdf
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