High Cell Density Trench N Channel MOSFET HUASHUO HSL10N06 Suitable for Synchronous Buck Converters
Key Attributes
Model Number:
HSL10N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
10A
RDS(on):
36mΩ@10V,4A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
46pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.227nF@15V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
HSL10N06
Package:
SOT-223
Product Description
Product Overview
The HSL10N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, making it suitable for demanding industrial applications.
Product Attributes
- Brand: HSL
- Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 10 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ 10V1 | 8 | A | |||
| IDM | Pulsed Drain Current2 | 30 | A | |||
| IAS | Avalanche Current | 13 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 31 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 60 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 4 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.044 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=4A | --- | 28 | 36 | m |
| VGS=4.5V , ID=2A | --- | 38 | 45 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -4.8 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=5A | --- | 25.3 | --- | S |
| Qg | Total Gate Charge (10V) | VDS=48V , VGS=10V , ID=5A | --- | 25 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.9 | --- | ||
| Qgd | Gate-Drain Charge | --- | 5 | --- | ||
| td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3 ID=5A | --- | 2.8 | --- | ns |
| tr | Rise Time | --- | 17 | --- | ||
| td(off) | Turn-Off Delay Time | --- | 21.2 | --- | ||
| tf | Fall Time | --- | 5.6 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 1227 | --- | pF |
| Coss | Output Capacitance | --- | 69 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 46 | --- | ||
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=15A , dI/dt=100A/s , TJ=25 | --- | 12.2 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 6.7 | --- | nC | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSL10N06 | SOT-223 | 3000/Tape&Reel | ||||
Notes:
1. Data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
3. EAS data shows Max. rating. Test condition: VDD=48V, VGS=10V, L=0.1mH, IAS=13A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121531_HUASHUO-HSL10N06_C5128191.pdf
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