Power MOSFET Hangzhou Silan Microelectronics SVF4N65RMJ for High Voltage Switching and Motor Control
Key Attributes
Model Number:
SVF4N65RMJ
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
50pF
Input Capacitance(Ciss):
440pF
Pd - Power Dissipation:
77W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SVF4N65RMJ
Package:
TO-251
Product Description
Product Overview
The SVF4N65RD/M/MJ/F/T is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology minimizes on-state resistance, enhances switching performance, and provides superior withstand capability for high energy pulses in avalanche and commutation modes. It is widely adopted in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Halogen free, Pb free
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @ TC=25C | Drain Current (ID) @ TC=100C | Power Dissipation (PD) @ TC=25C | RDS(on)(typ) @ VGS=10V | Breakdown Voltage (BVDSS) | Total Gate Charge (Qg) @ VDD=520V, VGS=10V, ID=4A |
| SVF4N65RD/M/MJ/F/T | TO-252-2L/TO-251D-3L/TO-251J-3L/TO-220F-3L/TO-220-3L | 650 V | 30 V | 4.0 A | 2.5 A | 77 W (D/M/MJ), 30 W (F), 100 W (T) | 2.3 | 650 V | 13 nC |
2501091111_Hangzhou-Silan-Microelectronics-SVF4N65RMJ_C601626.pdf
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