N channel power MOSFET Guangdong Hottech HKTD50N03 suitable for load switch and DC to DC converters
Key Attributes
Model Number:
HKTD50N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
8.5mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
110pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
37W
Input Capacitance(Ciss):
940pF@15V
Gate Charge(Qg):
9.8nC@10V
Mfr. Part #:
HKTD50N03
Package:
TO-252
Product Description
Product Overview
The HKTD50N03 is an N-CHANNEL Power MOSFET designed for efficient power management. It features ultra-low on-resistance and is suitable for low power DC to DC converter applications and load switch applications. This surface mount device comes in a TO-252 package.
Product Attributes
- Brand: HOTTECH
- Product Code: HKTD50N03
- Case Material: Molded Plastic
- UL Flammability: 94V-0
- Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current | 50 | A | |||
| ID@TC=100 | Continuous Drain Current | 30 | A | |||
| IDM | Pulsed Drain Current | 112 | A | |||
| EAS | Single Pulse Avalanche Energy | 24 | mJ | |||
| IAS | Avalanche Current | 22 | A | |||
| PD@TC=25 | Total Power Dissipation | 37 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10 V , ID=20A | 6.8 | 8.5 | m | |
| VGS=4.5V , ID=20A | 9.3 | 14 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 3.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=125 | --- | --- | 10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.8 | --- | |
| Qg | Total Gate Charge | VDS=15V , VGS=10V , ID=20A | --- | 9.8 | --- | nC |
| VGS=10V | --- | 4.2 | --- | nC | ||
| Gate-Drain Charge | --- | 3.6 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3, ID=15A | --- | 4 | --- | ns |
| Rise Time | --- | 8 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | --- | 30 | --- | ns | |
| Fall Time | --- | 4 | --- | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 940 | --- | pF |
| Output Capacitance | --- | 130 | --- | pF | ||
| Reverse Transfer Capacitance | --- | 110 | --- | pF |
2410121918_Guangdong-Hottech-HKTD50N03_C5364291.pdf
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