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quality Durable High Current N Channel MOSFET HUASHUO HSP0076A with 100V Drain Source Voltage and Performance factory
quality Durable High Current N Channel MOSFET HUASHUO HSP0076A with 100V Drain Source Voltage and Performance factory

Durable High Current N Channel MOSFET HUASHUO HSP0076A with 100V Drain Source Voltage and Performance

Key Attributes
Model Number: HSP0076A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
308A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
388pF
Number:
1 N-channel
Output Capacitance(Coss):
1.92nF
Input Capacitance(Ciss):
13.37nF
Pd - Power Dissipation:
429W
Gate Charge(Qg):
200nC@10V
Mfr. Part #:
HSP0076A
Package:
TO-220
Product Description

Product Overview

The HSP0076A is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring a 100V drain-source voltage rating and exceptionally low RDS(ON), this MOSFET is ideal for motor drivers, battery management systems (BMS), and high-frequency switching circuits requiring synchronous rectification. It offers guaranteed 100% EAS performance and is available as a Green Device, combining advanced high-cell density Trench technology with superior efficiency and reliability.

Product Attributes

  • Brand: HS-Semi
  • Model: HSP0076A
  • Technology: Advanced high cell density Trench technology
  • Availability: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1,6 308 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1,6 218 A
IDM Pulsed Drain Current2 550 A
EAS Single Pulse Avalanche Energy3 1012.5 mJ
IAS Avalanche Current 45 A
PD@TC=25 Total Power Dissipation4 429 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 60 /W
RJC Thermal Resistance Junction-Case1 --- 0.35 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A 1.8 2.2 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 --- 4.0 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 --- 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=125 --- 100 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
gfs Forward Transconductance VDS=5V , ID=20A 75 --- S
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=20A 200 --- nC
Qgs Gate-Source Charge 54 ---
Qgd Gate-Drain Charge 49 ---
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.0, ID=20A 47 --- ns
Tr Rise Time 28 ---
Td(off) Turn-Off Delay Time 79 ---
Tf Fall Time 18 ---
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz 13370 --- pF
Coss Output Capacitance 1920 ---
Crss Reverse Transfer Capacitance 388 ---
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 80 A
VSD Diode Forward Voltage2 VGS=0V , IS=50A , TJ=25 --- 1.1 V
trr Reverse Recovery Time IF=20A , dI/dt=100A/s , TJ=25 --- 70 nS
Qrr Reverse Recovery Charge --- 580 nC

Applications:

  • MOTOR Driver
  • BMS
  • High frequency switching and synchronous rectification

Features:

  • 100% EAS Guaranteed
  • Green Device Available
  • Super Low RDS(ON)
  • Advanced high cell density Trench technology

2410121637_HUASHUO-HSP0076A_C2903573.pdf

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