High cell density trenched mosfet HUASHUO HSBB8008 optimized for synchronous buck converter circuits
Key Attributes
Model Number:
HSBB8008
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2mΩ@4.5V,12A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
310pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
3.1nF@15V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
32nC@4.5V
Mfr. Part #:
HSBB8008
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB8008 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It offers super low gate charge and excellent CdV/dt effect decline, leveraging advanced high cell density Trench technology for fast switching performance.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Device Available
- Key Features: 100% EAS Guaranteed, Super Low Gate Charge, Excellent CdV/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 50 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 32 | A | |||
| IDM | Pulsed Drain Current | 150 | A | |||
| EAS | Single Pulse Avalanche Energy | 125 | mJ | |||
| IAS | Avalanche Current | 50 | A | |||
| PD@TC=25 | Total Power Dissipation | 31 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 65 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 4 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=12A | 4.2 | 4.9 | m | |
| VGS=4.5V , ID=12A | 4.6 | 5.5 | m | |||
| VGS=2.5V , ID=10A | 5.5 | 7.5 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.4 | --- | 1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=12A | 25 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.4 | --- | ||
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=4.5V , ID=12A | 32 | --- | nC | |
| Qgs | Gate-Source Charge | 6.1 | --- | |||
| Qgd | Gate-Drain Charge | 14 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=1.5 ID=12A | 12 | --- | ns | |
| Tr | Rise Time | 46 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 33 | --- | ns | ||
| Tf | Fall Time | 7.5 | --- | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 3100 | --- | pF | |
| Coss | Output Capacitance | 405 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 310 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | 50 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSBB8008 | PRPAK3*3 | Tape&Reel | 3000 |
2410121629_HUASHUO-HSBB8008_C508825.pdf
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