Power MOSFET transistor Hangzhou Silan Microelectronics SVF3878P7 designed for switching in AC DC power supplies
Key Attributes
Model Number:
SVF3878P7
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.28Ω@10V,4.5A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
150W
Output Capacitance(Coss):
-
Gate Charge(Qg):
-
Mfr. Part #:
SVF3878P7
Package:
TO-247-3L
Product Description
Product Description
The SVF3878P7 is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced process and cell structure are optimized for minimal on-state resistance, superior switching performance, and enhanced high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Part Number: SVF3878P7
- Package: TO-247-3L
- Hazardous Substance Control: Pb free
- Packing Type: Tube
Technical Specifications
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 900 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=900V, VGS=0V | -- | -- | 100 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 10.0 | A |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250A | 2.5 | -- | 4.5 | V |
| On State Resistance | RDS(on) | VGS=10V, ID=4.5A | -- | 1.0 | 1.28 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | -- | 2009 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | -- | 208 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | -- | 47 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=400V, RG=25, ID=4.0A | -- | 22 | -- | ns |
| Turn-on Rise Time | tr | VDD=400V, RG=25, ID=4.0A | -- | 28 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=400V, RG=25, ID=4.0A | -- | 84 | -- | ns |
| Turn-off Fall Time | tf | VDD=400V, RG=25, ID=4.0A | -- | 30 | -- | ns |
| Total Gate Charge | Qg | VDD=450V, VGS=10V, ID=9.0A | -- | 68 | -- | nC |
| Gate-Source Charge | Qgs | VDD=450V, VGS=10V, ID=9.0A | -- | 10 | -- | nC |
| Gate-Drain Charge | Qg d | VDD=450V, VGS=10V, ID=9.0A | -- | 39 | -- | nC |
| Source Current | IS | -- | -- | -- | 9.0 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 27.0 | A |
| Diode Forward Voltage | VSD | IS=9.0A, VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=9.0A, VGS=0V, dIF/dt=100A/S | -- | 715 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=9.0A, VGS=0V, dIF/dt=100A/S | -- | 6.5 | -- | C |
| Thermal Resistance, Junction-to-Case | RJC | -- | -- | 0.83 | -- | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | -- | -- | 50 | -- | C/W |
2501091110_Hangzhou-Silan-Microelectronics-SVF3878P7_C18186216.pdf
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