Power mosfet Guangdong Hottech IRLML6302 P channel type with low profile and molded plastic housing
Key Attributes
Model Number:
IRLML6302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
780mA
RDS(on):
600mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 P-Channel
Pd - Power Dissipation:
540mW
Input Capacitance(Ciss):
97pF
Output Capacitance(Coss):
53pF
Gate Charge(Qg):
2.4nC@4.5V
Mfr. Part #:
IRLML6302
Package:
SOT-23
Product Description
IRLML6302 P-Channel Power MOSFET
The IRLML6302 is a P-Channel Power MOSFET featuring GenerationV technology, offering ultra-low on-resistance and a low profile (<1.1mm) for efficient power management. Its fast switching capabilities make it suitable for various electronic applications. The device is housed in a compact SOT-23 package.
Product Attributes
- Case Material: Molded Plastic
- Flammability Classification Rating: 94V-0
- Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Marking: 1C7A
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | |||||
| Continuous Drain Current, ID @ TA = 25C (VGS @ -4.5V) | -0.78 | A | |||
| Continuous Drain Current, ID @ TA = 70C (VGS @ -4.5V) | -0.62 | A | |||
| Pulsed Drain Current, IDM | -4.9 | A | |||
| Power Dissipation, PD @ TA = 25C | 540 | mW | |||
| Linear Derating Factor | 4.3 | mW/C | |||
| Gate-to-Source Voltage, VGS | ±12 | V | |||
| Peak Diode Recovery dv/dt | -5.0 | V/ns | |||
| Junction and Storage Temperature Range, TJ, TSTG | -55 | +150 | C | ||
| Maximum Junction-to-Ambient, RJA | 230 | C/W | |||
| Electrical Characteristics @ TJ = 25C (unless otherwise specified) | |||||
| Drain-to-Source Breakdown Voltage, V(BR)DSS | VGS = 0V, ID = -250A | -20 | V | ||
| Breakdown Voltage Temp. Coefficient, V(BR)DSS/TJ | Reference to 25C, ID = -1mA | -4.9 | mV/C | ||
| Static Drain-to-Source On-Resistance, RDS(ON) | VGS = -4.5V, ID = -0.61A | 0.60 | Ω | ||
| Static Drain-to-Source On-Resistance, RDS(ON) | VGS = -2.7V, ID = -0.31A | 0.90 | Ω | ||
| Gate Threshold Voltage, VGS(th) | VDS = VGS, ID = -250A | -0.70 | -1.5 | V | |
| Forward Transconductance, gfs | VDS = -10V, ID = -0.31A | 0.56 | S | ||
| Drain-to-Source Leakage Current, IDSS | VDS = -16V, VGS = 0V | -1.0 | µA | ||
| Drain-to-Source Leakage Current, IDSS | VDS = -16V, VGS = 0V, TJ = 125C | -25 | µA | ||
| Gate-to-Source Forward Leakage, IGSS | VGS = -12V | -100 | nA | ||
| Gate-to-Source Reverse Leakage | VGS = 12V | 100 | |||
| Total Gate Charge, Qg | ID = -0.61A, VDS = -16V, VGS = -4.5V | 2.4 | 3.6 | nC | |
| Gate-to-Source Charge, Qgs | 0.56 | 0.84 | |||
| Gate-to-Drain ("Miller") Charge, Qgd | 1.0 | 1.5 | |||
| Turn-On Delay Time, td(on) | VDD = -10V, ID = -0.61A, RG = 6.2Ω, RD = 16Ω | 13 | ns | ||
| Rise Time, tr | 18 | ns | |||
| Turn-Off Delay Time, td(off) | 22 | ns | |||
| Fall Time, tf | 22 | ns | |||
| Input Capacitance, Ciss | VGS = 0V, VDS = -15V, = 1.0MHz | 97 | pF | ||
| Output Capacitance, Coss | 53 | pF | |||
| Reverse Transfer Capacitance, Crss | 28 | pF | |||
| Source-Drain Ratings and Characteristics | |||||
| Continuous Source Current (Body Diode), IS | -0.54 | A | |||
| Pulsed Source Current (Body Diode), ISM | -4.9 | A | |||
| Diode Forward Voltage, VSD | TJ = 25C, IS = -0.61A, VGS = 0V | -1.2 | V | ||
| Reverse Recovery Time, trr | TJ = 25C, IF = -0.61A, di/dt = 100A/µs | 35 | 53 | ns | |
| Reverse Recovery Charge, Qrr | TJ = 25C, IF = -0.61A, di/dt = 100A/µs | 26 | 39 | nC | |
2410121947_Guangdong-Hottech-IRLML6302_C5364312.pdf
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