HSL2N15 Trenched N Channel MOSFET Offering High Cell Density and Low Gate Charge for Power Switching
Key Attributes
Model Number:
HSL2N15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
2A
RDS(on):
210mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Input Capacitance(Ciss):
840pF
Output Capacitance(Coss):
119pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
HSL2N15
Package:
SOT-223
Product Description
Product Overview
The HSL2N15 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it ideal for small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a Green Device. Key advantages include super low gate charge and excellent Cdv/dt effect decline, leveraging advanced high cell density Trench technology.
Product Attributes
- Brand: HS
- Technology: N-Channel, Trench MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| HSL2N15 | Drain-Source Voltage (VDS) | 150 | V | ||||
| Gate-Source Voltage (VGS) | ±20 | V | |||||
| Continuous Drain Current (ID @ TA=25) | VGS @ 10V | 2 | A | ||||
| Continuous Drain Current (ID @ TA=70) | VGS @ 10V | 1.5 | A | ||||
| Pulsed Drain Current (IDM) | 8 | A | |||||
| Total Power Dissipation (PD @ TA=25) | 2 | W | |||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-ambient (RJA) | --- | 65 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | --- | 35 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 150 | V | ||||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=2A | --- | 210 | 280 | m | ||
| HSL2N15 | Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=1A | --- | 220 | 300 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.0 | 1.8 | 2.5 | V | ||
| HSL2N15 | Drain-Source Leakage Current (IDSS) | VDS=150V , VGS=0V , TJ=25 | --- | 1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=150V , VGS=0V , TJ=125 | --- | 30 | uA | |||
| HSL2N15 | Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | ±100 | nA | ||
| HSL2N15 | Total Gate Charge (Qg) | VDS=75V , VGS=10V , ID=2A | 18 | --- | nC | ||
| Gate-Source Charge (Qgs) | 4.6 | --- | nC | ||||
| HSL2N15 | Gate-Drain Charge (Qgd) | 5.7 | --- | nC | |||
| HSL2N15 | Turn-On Delay Time (td(on)) | VDD=75V , VGS=10V , RG=6 , ID=2A | 13 | --- | ns | ||
| Rise Time (tr) | 19 | --- | ns | ||||
| HSL2N15 | Turn-Off Delay Time (td(off)) | 26 | --- | ns | |||
| Fall Time (tf) | 9 | --- | ns | ||||
| HSL2N15 | Input Capacitance (Ciss) | VDS=75V , VGS=0V , f=1MHz | 840 | --- | pF | ||
| Output Capacitance (Coss) | 119 | --- | pF | ||||
| Reverse Transfer Capacitance (Crss) | 25 | --- | pF | ||||
| HSL2N15 | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | 2 | A | ||
| HSL2N15 | Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V |
Ordering Information
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSL2N15 | SOT-223 | 3000/Tape&Reel | 3000 |
2508281825_HUASHUO-HSL2N15_C51025830.pdf
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