N Channel 4A 600V Power MOSFET Hangzhou Silan Microelectronics SVF4N60CAF for AC DC and DC DC Power Conversion
Key Attributes
Model Number:
SVF4N60CAF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
2Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
4.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
433pF@25V
Pd - Power Dissipation:
33W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SVF4N60CAF
Package:
TO-220
Product Description
Product Overview
The SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced process minimizes on-state resistance, enhances switching performance, and provides superior high-energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: Hangzhou, China
- Hazardous Substance Control: Halogen free, Pb free
Technical Specifications
| Part No. | Package | 4A, 600V Rating | RDS(on)(typ.)@VGS=10V | Low Gate Charge | Low Crss | Fast Switching | Improved dv/dt Capability |
| SVF4N60CAF | TO-220F-3L | 4A, 600V | 2.0 | Yes | Yes | Yes | Yes |
| SVF4N60CAK | TO-262-3L | 4A, 600V | 2.0 | Yes | Yes | Yes | Yes |
| SVF4N60CAD | TO-252-2L | 4A, 600V | 2.0 | Yes | Yes | Yes | Yes |
| SVF4N60CAT | TO-220-3L | 4A, 600V | 2.0 | Yes | Yes | Yes | Yes |
| SVF4N60CAMN | TO-251N-3L | 4A, 600V | 2.0 | Yes | Yes | Yes | Yes |
| SVF4N60CAMJ | TO-251J-3L | 4A, 600V | 2.0 | Yes | Yes | Yes | Yes |
| Characteristic | Symbol | SVF4N60CAF | SVF4N60CAK | SVF4N60CAD | SVF4N60CAMN/MJ | SVF4N60CAT | Unit |
| Drain-Source Voltage | VDS | 600 | 600 | 600 | 600 | 600 | V |
| Gate-Source Voltage | VGS | 30 | 30 | 30 | 30 | 30 | V |
| Drain Current (TC=25C) | ID | 4.0 | 4.0 | 4.0 | 4.0 | 4.0 | A |
| Drain Current (TC=100C) | ID | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | A |
| Drain Current Pulsed | IDM | 16 | 16 | 16 | 16 | 16 | A |
| Power Dissipation (TC=25C) | PD | 33 | 92 | 77 | 86 | 110 | W |
| Single Pulsed Avalanche Energy (Note 1) | EAS | 217 | 217 | 217 | 217 | 217 | mJ |
| Operation Junction Temperature Range | TJ | -55+150 | -55+150 | -55+150 | -55+150 | -55+150 | C |
| Storage Temperature Range | Tstg | -55+150 | -55+150 | -55+150 | -55+150 | -55+150 | C |
| Characteristic | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 600 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=600V, VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain- Source On State Resistance | RDS(on) | VGS=10V, ID=2.0A | -- | 2.0 | 2.4 | |
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | -- | 433 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | -- | 55 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | -- | 4.5 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=300V, ID=4A, RG=25 (Note2,3) | -- | 10 | -- | ns |
| Turn-on Rise Time | tr | VDD=300V, ID=4A, RG=25 (Note2,3) | -- | 26 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=300V, ID=4A, RG=25 (Note2,3) | -- | 29 | -- | ns |
| Turn-off Fall Time | tf | VDD=300V, ID=4A, RG=25 (Note2,3) | -- | 26 | -- | ns |
| Total Gate Charge | Qg | VDS=480V, ID=4A, VGS=10V (Note 2,3) | -- | 13 | -- | nC |
| Gate-Source Charge | Qgs | VDS=480V, ID=4A, VGS=10V (Note 2,3) | -- | 2.8 | -- | nC |
| Gate-Drain Charge | Qg | VDS=480V, ID=4A, VGS=10V (Note 2,3) | -- | 6.2 | -- | nC |
| Continuous Source Current | IS | -- | -- | -- | 4.0 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 16 | A |
| Diode Forward Voltage | VSD | IS=4.0A,VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=4.0A,VGS=0V, dIF/dt=100A/s (Note 2) | -- | 420 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=4.0A,VGS=0V, dIF/dt=100A/s (Note 2) | -- | 1.8 | -- | C |
2501091111_Hangzhou-Silan-Microelectronics-SVF4N60CAF_C601610.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
