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quality Trench technology based N channel MOSFET HUASHUO HSH120N20 ideal for synchronous buck converter designs factory
quality Trench technology based N channel MOSFET HUASHUO HSH120N20 ideal for synchronous buck converter designs factory

Trench technology based N channel MOSFET HUASHUO HSH120N20 ideal for synchronous buck converter designs

Key Attributes
Model Number: HSH120N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
120A
RDS(on):
11mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Number:
1 N-channel
Output Capacitance(Coss):
467pF
Pd - Power Dissipation:
500W
Input Capacitance(Ciss):
3.52nF
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
HSH120N20
Package:
TO-263
Product Description

Product Overview

The HSH120N20 is a high-performance N-channel MOSFET featuring an advanced high cell density Trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is designed for power switching applications and offers excellent Cdv/dt effect decline.

Product Attributes

  • Brand: HSH-Semi
  • Type: N-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage 200 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 120 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 92 A
IDM Pulsed Drain Current2 520 A
EAS Single Pulse Avalanche Energy3 845 mJ
PD@TC=25 Total Power Dissipation3 500 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient1 --- 60 /W
RJC Thermal Resistance Junction-Case1 --- 0.36 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 200 --- --- V
RDS(ON),typ Static Drain-Source On-Resistance2 VGS=10V , ID=20A --- 8.9 11 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.5 3.3 4.5 V
IDSS Drain-Source Leakage Current VDS=200V , VGS=0V , TJ=25 --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=200V , VGS=0V , TJ=55 --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 5.0 ---
Qg Total Gate Charge (10V) VDS=100V , VGS=10V , ID=20A --- 46 --- nC
Qgs Gate-Source Charge --- 20 ---
Qgd Gate-Drain Charge --- 12 ---
Td(on) Turn-On Delay Time VDD=100V , VGS=10V , RG=2.5 ID=20A --- 21 --- ns
Tr Rise Time --- 22 --- ns
Td(off) Turn-Off Delay Time --- 32 --- ns
Tf Fall Time --- 23 --- ns
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz --- 3520 --- pF
Coss Output Capacitance --- 467 --- pF
Crss Reverse Transfer Capacitance --- 37 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 120 A
VSD Diode Forward Voltage2 VGS=0V , IS=30A , TJ=25 --- --- 1.2 V
Trr Body Diode Reverse Recovery Time IF = 15A, dIF/dt = 100A/s --- 133 --- ns
Qrr Body Diode Reverse Recovery Charge IF = 15A, dIF/dt = 100A/s --- 677 --- nC

Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.5mH.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.


2410122016_HUASHUO-HSH120N20_C22359317.pdf

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