power management using Guangdong Hottech SI2310 low voltage n channel mosfet for dc to dc converters
Key Attributes
Model Number:
SI2310
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
105mΩ@10V,3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
19.5pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
247pF@30V
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
SI2310
Package:
SOT-23
Product Description
Product Overview
The SI2310 is a low voltage N-channel MOSFET designed for low power DC to DC converter and load switch applications. It features low on-resistance, making it suitable for efficient power management.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-Source breakdown voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250A | ||
| Zero gate voltage drain current | IDSS | 1 | A | VDS=60V, VGS=0V | ||
| Gate-body leakage current | IGSS | 100 | nA | VDS=0V, VGS=20V | ||
| Gate-threshold voltage | VGS(th) | 0.5 | 2 | V | VDS=VGS, ID=250A | |
| Drain-source on-resistance | RDS(ON) | 105 | m | VGS=10V, ID=3A | ||
| Drain-source on-resistance | RDS(ON) | 125 | m | VGS=4.5V, ID=3A | ||
| Forward transconductance | gFS | 1.4 | S | VDS=15V, ID=2A | ||
| Input capacitance | Ciss | 247 | pF | VDS=30V, VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 34 | pF | VDS=30V, VGS=0V, f=1MHz | ||
| Reverse transfer capacitance | Crss | 19.5 | pF | VDS=30V, VGS=0V, f=1MHz | ||
| Turn-on delay time | td(on) | 6 | nS | VDD=30V, VGS=10V, RGEN=1, ID=1.5A | ||
| Turn-on rise time | tr | 15 | nS | VDD=30V, VGS=10V, RGEN=1, ID=1.5A | ||
| Turn-off delay time | td(off) | 15 | nS | VDD=30V, VGS=10V, RGEN=1, ID=1.5A | ||
| Turn-off fall time | tf | 10 | nS | VDD=30V, VGS=10V, RGEN=1, ID=1.5A | ||
| Total gate charge | Qg | 6 | nC | VDS=30V,VGS=4.5V,ID=3A | ||
| Gate-source charge | Qgs | 1 | nC | VDS=30V,VGS=4.5V,ID=3A | ||
| Gate-drain charge | Qg d | 1.3 | nC | VDS=30V,VGS=4.5V,ID=3A | ||
| Diode forward voltage | VSD | 1.2 | V | IS=3A, VGS=0V | ||
| Drain-source voltage | VDS | 60 | V | |||
| Gate-source voltage | VGS | 20 | V | |||
| Continuous drain current | ID | 3 | A | |||
| Pulsed drain current | IDM | 10 | A | |||
| Power dissipation | PD | 0.35 | W | |||
| Thermal resistance from Junction to ambient | RJA | 357 | C/W | |||
| Junction temperature | TJ | 150 | C | |||
| Storage temperature | TSTG | -55 | +150 | C |
2410010201_Guangdong-Hottech-SI2310_C5364315.pdf
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