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quality Low RDS ON N Channel MOSFET HUASHUO HSBA0056 100V Fast Switching Device for High Speed and Portable Applications factory
quality Low RDS ON N Channel MOSFET HUASHUO HSBA0056 100V Fast Switching Device for High Speed and Portable Applications factory

Low RDS ON N Channel MOSFET HUASHUO HSBA0056 100V Fast Switching Device for High Speed and Portable Applications

Key Attributes
Model Number: HSBA0056
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
32A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15.5mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
8pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
37.9W
Input Capacitance(Ciss):
849pF@50V
Gate Charge(Qg):
17.9nC@10V
Mfr. Part #:
HSBA0056
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA0056 is a N-Channel Fast Switching MOSFET designed for 100V applications. It offers excellent performance with low RDS(ON) and low gate charge, making it suitable for portable equipment, battery-powered systems, and hard switching and high-speed circuits. This MOSFET is 100% EAS guaranteed and compliant with RoHS and Halogen-Free standards.

Product Attributes

  • Brand: HS-Semi
  • Model: HSBA0056
  • Channel Type: N-Channel
  • Voltage Rating: 100V
  • Compliance: RoHS and Halogen-Free
  • Key Features: 100% EAS Guaranteed, Low RDS(ON), Low Gate Charge

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current1,6 32 A
ID@TC=100 Continuous Drain Current1,6 20 A
IDM Pulsed Drain Current2 90 A
EAS Single Pulse Avalanche Energy3 45 mJ
IAS Avalanche Current 30 A
PD@TC=25 Total Power Dissipation4 37.9 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 (t10s) 25 /W
RJA Thermal Resistance Junction-Ambient1 55 /W
RJC Thermal Resistance Junction-Case1 3.3 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 V
RDS(ON),Max Static Drain-Source On-Resistance2 VGS=10V , ID=10A 15.5 20 m
RDS(ON),Max Static Drain-Source On-Resistance2 VGS=4.5V , ID=10A 21 30 V
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.2 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=55 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
Rg Gate Resistance VDS=0V , VGS=0V,f=1MHz 1
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=10A 17.9 nC
Qgs Gate-Source Charge 2.8
Qgd Gate-Drain Charge 5.2
Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=6, ID=1A 13 ns
Tr Rise Time 6
Td(off) Turn-Off Delay Time 30
Tf Fall Time 29
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz 849 pF
Coss Output Capacitance 185
Crss Reverse Transfer Capacitance 8
Diode Characteristics
IS Continuous Source Current1,5,6 VG=VD=0V , Force Current 32 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 1.2 V

2410121655_HUASHUO-HSBA0056_C5128206.pdf

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