High Voltage MOSFET Hangzhou Silan Microelectronics SVF6N70F for Power Supply and Motor Driver
Key Attributes
Model Number:
SVF6N70F
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.88pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.039nF@25V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
21.94nC@10V
Mfr. Part #:
SVF6N70F
Package:
TO-220F-3
Product Description
Product Overview
The SVF6N70F is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching performance, and provide superior avalanche and commutation mode energy handling. This device is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Part Number: SVF6N70F
- Package: TO-220F-3L
- Hazardous Substance Control: Pb free
- Packing Type: Tube
- Origin: Hangzhou Silan Microelectronics Co., Ltd.
- Website: http://www.silan.com.cn
Technical Specifications
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 700 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=700V, VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain- Source On State Resistance | RDS(on) | VGS=10V, ID=3.0A | -- | 1.35 | 1.7 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | -- | 1039 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | -- | 98 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | -- | 3.9 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=350V, ID=6.0A, RG=25 | -- | 24 | -- | ns |
| Turn-on Rise Time | tr | VDD=350V, ID=6.0A, RG=25 | -- | 37 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=350V, ID=6.0A, RG=25 | -- | 68 | -- | ns |
| Turn-off Fall Time | tf | VDD=350V, ID=6.0A, RG=25 | -- | 37 | -- | ns |
| Total Gate Charge | Qg | VDS=560V, ID=6.0A, VGS=10V | -- | 22 | -- | nC |
| Gate-Source Charge | Qgs | VDS=560V, ID=6.0A, VGS=10V | -- | 6.1 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=560V, ID=6.0A, VGS=10V | -- | 8.8 | -- | nC |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Source Current | IS | -- | -- | -- | 6.0 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 24 | A |
| Diode Forward Voltage | VSD | IS=6.0A,VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=6.0A,VGS=0V, dIF/dt=100A/s | -- | 494 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=6.0A,VGS=0V, dIF/dt=100A/s | -- | 3.4 | -- | C |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | TA=25C UNLESS OTHERWISE NOTED | -- | -- | 700 | V |
| Gate-Source Voltage | VGS | TA=25C UNLESS OTHERWISE NOTED | -- | -- | 30 | V |
| Drain Current | ID | TC=25C | -- | -- | 6.0 | A |
| Drain Current | ID | TC=100C | -- | -- | 3.79 | A |
| Drain Current Pulsed | IDM | -- | -- | -- | 24.0 | A |
| Power Dissipation(TC=25C) | PD | -- | -- | -- | 45 | W |
| Derate above 25C | -- | -- | -- | -- | 0.36 | W/C |
| Single Pulsed Avalanche Energy | EAS | Note 1 | -- | -- | 463 | mJ |
| Operation Junction Temperature Range | TJ | -- | -55 | -- | +150 | C |
| Storage Temperature Range | Tstg | -- | -55 | -- | +150 | C |
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction-to-Case | RJC | -- | -- | -- | 2.78 | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | -- | -- | -- | 62.5 | C/W |
2501091111_Hangzhou-Silan-Microelectronics-SVF6N70F_C403824.pdf
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