Power MOSFET HUASHUO HSU6014 N Channel Device with High Cell Density Trench Technology and Low RDS

Key Attributes
Model Number: HSU6014
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
46pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.027nF@15V
Pd - Power Dissipation:
31.3W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
HSU6014
Package:
TO-252-2
Product Description

HSU6014 N-Channel 60V Fast Switching MOSFETs

The HSU6014 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It offers super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel MOSFET
  • Technology: Advanced high cell density Trench technology
  • Certifications: RoHS and Green Product compliant
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Parameter Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=250uA 60 -- -- V
BVDSS Temperature Coefficient Reference to 25 , ID=1mA -- 0.044 -- V/
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V , ID=15A -- 33 40 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V , ID=7A -- 40 50 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =250uA 1.0 -- 2.5 V
VGS(th) Temperature Coefficient -- -- -4.8 -- mV/
Drain-Source Leakage Current (IDSS) VDS=48V , VGS=0V , TJ=25 -- -- 1 uA
Drain-Source Leakage Current (IDSS) VDS=48V , VGS=0V , TJ=55 -- -- 5 uA
Gate-Source Leakage Current (IGSS) VGS=20V , VDS=0V -- -- 100 nA
Forward Transconductance (gfs) VDS=5V , ID=15A -- 25.3 -- S
Gate Resistance (Rg) VDS=0V , VGS=0V , f=1MHz -- 2.5 --
Total Gate Charge (Qg) VDS=48V , VGS=10V , ID=15A -- 19 -- nC
Gate-Source Charge (Qgs) -- -- 2.5 -- nC
Gate-Drain Charge (Qgd) -- -- 5 -- nC
Turn-On Delay Time (Td(on)) VDD=30V , VGS=10V , RG=3.3 ID=15A -- 2.8 -- ns
Rise Time (Tr) -- -- 16.6 -- ns
Turn-Off Delay Time (Td(off)) -- -- 21.2 -- ns
Fall Time (Tf) -- -- 5.6 -- ns
Input Capacitance (Ciss) VDS=15V , VGS=0V , f=1MHz -- 1027 -- pF
Output Capacitance (Coss) -- -- 65 -- pF
Reverse Transfer Capacitance (Crss) -- -- 46 -- pF
Continuous Source Current (IS) VG=VD=0V , Force Current -- -- 20 A
Pulsed Source Current (ISM) -- -- -- 40 A
Diode Forward Voltage (VSD) VGS=0V , IS=1A , TJ=25 -- -- 1.2 V
Reverse Recovery Time (trr) IF=15A , dI/dt=100A/s , TJ=25 -- 12.2 -- nS
Reverse Recovery Charge (Qrr) -- -- 7.3 -- nC
Continuous Drain Current (ID) TC=25, VGS @ 10V -- -- 20 A
Continuous Drain Current (ID) TC=100, VGS @ 10V -- -- 13 A
Continuous Drain Current (ID) TA=25, VGS @ 10V -- -- 5 A
Continuous Drain Current (ID) TA=70, VGS @ 10V -- -- 4 A
Pulsed Drain Current (IDM) -- -- -- 40 A
Single Pulse Avalanche Energy (EAS) -- -- -- 22 mJ
Avalanche Current (IAS) -- -- -- 21 A
Total Power Dissipation (PD) TC=25 -- -- 31.3 W
Total Power Dissipation (PD) TA=25 -- -- 2 W
Storage Temperature Range (TSTG) -- -55 -- 150
Operating Junction Temperature Range (TJ) -- -55 -- 150
Thermal Resistance Junction-ambient (RJA) -- -- -- 62 /W
Thermal Resistance Junction-Case (RJC) -- -- -- 4 /W

Ordering Information

Part Number Package Code Packaging Quantity
HSU6014 TO252-2 Tape&Reel 2500

2410121448_HUASHUO-HSU6014_C701008.pdf
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