Power MOSFET HUASHUO HSU6014 N Channel Device with High Cell Density Trench Technology and Low RDS
HSU6014 N-Channel 60V Fast Switching MOSFETs
The HSU6014 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It offers super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS and Green Product compliant
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | -- | -- | V |
| BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | -- | 0.044 | -- | V/ |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=15A | -- | 33 | 40 | m |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=7A | -- | 40 | 50 | m |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.0 | -- | 2.5 | V |
| VGS(th) Temperature Coefficient | -- | -- | -4.8 | -- | mV/ |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | -- | -- | 1 | uA |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=55 | -- | -- | 5 | uA |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | -- | -- | 100 | nA |
| Forward Transconductance (gfs) | VDS=5V , ID=15A | -- | 25.3 | -- | S |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | -- | 2.5 | -- | |
| Total Gate Charge (Qg) | VDS=48V , VGS=10V , ID=15A | -- | 19 | -- | nC |
| Gate-Source Charge (Qgs) | -- | -- | 2.5 | -- | nC |
| Gate-Drain Charge (Qgd) | -- | -- | 5 | -- | nC |
| Turn-On Delay Time (Td(on)) | VDD=30V , VGS=10V , RG=3.3 ID=15A | -- | 2.8 | -- | ns |
| Rise Time (Tr) | -- | -- | 16.6 | -- | ns |
| Turn-Off Delay Time (Td(off)) | -- | -- | 21.2 | -- | ns |
| Fall Time (Tf) | -- | -- | 5.6 | -- | ns |
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | -- | 1027 | -- | pF |
| Output Capacitance (Coss) | -- | -- | 65 | -- | pF |
| Reverse Transfer Capacitance (Crss) | -- | -- | 46 | -- | pF |
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -- | -- | 20 | A |
| Pulsed Source Current (ISM) | -- | -- | -- | 40 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | -- | -- | 1.2 | V |
| Reverse Recovery Time (trr) | IF=15A , dI/dt=100A/s , TJ=25 | -- | 12.2 | -- | nS |
| Reverse Recovery Charge (Qrr) | -- | -- | 7.3 | -- | nC |
| Continuous Drain Current (ID) | TC=25, VGS @ 10V | -- | -- | 20 | A |
| Continuous Drain Current (ID) | TC=100, VGS @ 10V | -- | -- | 13 | A |
| Continuous Drain Current (ID) | TA=25, VGS @ 10V | -- | -- | 5 | A |
| Continuous Drain Current (ID) | TA=70, VGS @ 10V | -- | -- | 4 | A |
| Pulsed Drain Current (IDM) | -- | -- | -- | 40 | A |
| Single Pulse Avalanche Energy (EAS) | -- | -- | -- | 22 | mJ |
| Avalanche Current (IAS) | -- | -- | -- | 21 | A |
| Total Power Dissipation (PD) | TC=25 | -- | -- | 31.3 | W |
| Total Power Dissipation (PD) | TA=25 | -- | -- | 2 | W |
| Storage Temperature Range (TSTG) | -- | -55 | -- | 150 | |
| Operating Junction Temperature Range (TJ) | -- | -55 | -- | 150 | |
| Thermal Resistance Junction-ambient (RJA) | -- | -- | -- | 62 | /W |
| Thermal Resistance Junction-Case (RJC) | -- | -- | -- | 4 | /W |
Ordering Information
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSU6014 | TO252-2 | Tape&Reel | 2500 |
2410121448_HUASHUO-HSU6014_C701008.pdf
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