NPN silicon transistor GUOXIN JIAPIN SEMICONDUCTOR FC3585 in SC59 package for broadband low noise amplifier
Product Description
The FC3585 is a high-frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It utilizes a planar process and offers high power gain, a low noise figure, a large dynamic range, and ideal current characteristics. Packaged in an SC-59 surface-mount package, it is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.
Product Attributes
- Brand: (Guo Xin Jia Pin SEMICONDUTOR)
- Origin: China (implied by manufacturer name and language)
- Package Type: SC-59
Technical Specifications
| Parameter | Symbol | Min | Typical | Max | Unit | Test Condition |
| Collector-Base Breakdown Voltage | VCBO | 20 | V | IC=1.0A | ||
| Collector-Base Leakage Current | ICBO | 0.1 | A | VCB=10V | ||
| Emitter-Base Leakage Current | IEBO | 0.1 | A | VEB=1V | ||
| DC Current Gain | HFE | 60 | 150 | 250 | VCE=6V,IC=10mA | |
| Gain Bandwidth Product | fT | 10 | GHz | VCE=6V,IC=10mA | ||
| Output Feedback Capacitance | Cre | 0.3 | 0.8 | pF | VCB=10V,IE=0mA,f=1MHz | |
| Power Gain | | S21e | | 5.5 | dB | VCE=6V,IC=10mA,f=2GHz | ||
| Noise Figure | NF | 2.5 | 3.0 | dB | VCE=6V,IC=5mA,f=2GHz |
| Parameter | Symbol | Limit | Unit | Condition |
| Collector-Base Breakdown Voltage | VCBO | 20 | V | TA=25 |
| Collector-Emitter Breakdown Voltage | VCEO | 10 | V | TA=25 |
| Emitter-Base Breakdown Voltage | VEBO | 1.5 | V | TA=25 |
| Collector Current | IC | 35 | mA | TA=25 |
| Power Dissipation | PC | 200 | mW | TA=25 |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -65 ~ +150 |
| Product Number | Standard Packaging | Bin Grade | HFE Range |
| FC3585 | 3K/Reel | A | 60-100 |
| FC3585 | 3K/Reel | B | 90-130 |
| FC3585 | 3K/Reel | C | 120-180 |
| FC3585 | 3K/Reel | D | 170-250 |
2410121233_GUOXIN-JIAPIN-SEMICONDUCTOR-FC3585_C2992562.pdf
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