High density surface mount transistor Guoxin Jiapin Semiconductor FC1406 with low noise and high gain
Key Attributes
Model Number:
FC1406
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
8.5GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
35mA
Collector - Emitter Voltage VCEO:
10V
Mfr. Part #:
FC1406
Package:
SOT-323
Product Description
Product Description
The FC1406 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Shenzhen Guoxin Jiapin Semiconductor Co., Ltd. It features high power gain and low noise characteristics, utilizing a planar NPN silicon epitaxial bipolar process. Packaged in SOT-323, it is suitable for high-density surface mount applications and is primarily used in high-frequency, low-noise amplifiers for VHF, UHF, and CATV.
Product Attributes
- Brand: Guoxin Jiapin ()
- Origin: Shenzhen, China
- Material: Silicon Epitaxial Bipolar
- Packaging: SOT-323
- Standard Package: 3K/Reel
Technical Specifications
| Parameter | Symbol | Min | Typical | Max | Unit | Test Conditions |
| Collector-Base Breakdown Voltage | VCBO | 20 | V | IC=1.0A | ||
| Collector-Emitter Breakdown Voltage | VCEO | 10 | V | |||
| Emitter-Base Breakdown Voltage | VEBO | 1.5 | V | |||
| Collector Current | IC | 35 | mA | |||
| Power Dissipation | PC | 150 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 | |||
| Collector-Base Leakage Current | ICBO | 0.1 | A | VCB=10V | ||
| Emitter-Base Leakage Current | IEBO | 0.1 | A | VEB=1V | ||
| DC Current Gain | hFE | 60 | 150 | 250 | VCE=3V, IC=5mA | |
| Gain Bandwidth Product | fT | 8 | 8.5 | GHz | VCE=3V,IC=5mA,f=2GHz | |
| Output Feedback Capacitance | Cre | 0.65 | 1.0 | pF | VCB=10V,IE=0mA,f=1MHz | |
| Power Gain | | S21e | | 5.5 | dB | VCE=3V,IC=5mA,f=2GHz | ||
| Noise Figure | NF | 2.0 | dB | VCE=3V,IC=5mA,f=2GHz |
2410121237_GUOXIN-JIAPIN-SEMICONDUCTOR-FC1406_C2992555.pdf
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