Power MOSFET Hangzhou Silan Microelectronics SVF10N65F 650V 10A N channel TO 220F 3L transistor
Key Attributes
Model Number:
SVF10N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
800mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
-
Output Capacitance(Coss):
130pF
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
SVF10N65F
Package:
TO-220F-3
Product Description
Product Overview
The SVF10N65T/F/K/S is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan proprietary F-CellTM structure VDMOS technology. This advanced process and cell structure are engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free (SVF10N65T/F/K), Halogen free (SVF10N65S/STR)
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @ TC=25C | Drain Current (ID) @ TC=100C | RDS(on)(typ.) @ VGS=10V | Power Dissipation (PD) @ TC=25C | Single Pulsed Avalanche Energy (EAS) | Junction-to-Case Thermal Resistance (RJC) |
| SVF10N65T | TO-220-3L | 650V | 30V | 10A | 6.3A | 0.80 | 156W | 618mJ | 0.83C/W |
| SVF10N65F | TO-220F-3L | 650V | 30V | 10A | 6.3A | 0.80 | 150W | 618mJ | 2.5C/W |
| SVF10N65K | TO-262-3L | 650V | 30V | 10A | 6.3A | 0.80 | 150W | 618mJ | 0.80C/W |
| SVF10N65S | TO-263-2L | 650V | 30V | 10A | 6.3A | 0.80 | 150W | 618mJ | 0.83C/W |
| SVF10N65STR | TO-263-2L | 650V | 30V | 10A | 6.3A | 0.80 | 150W | 618mJ | 0.83C/W |
| Characteristic | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250A | 650 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=650V,VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS,ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain-Source On State Resistance | RDS(on) | VGS=10V,ID=5.0A | -- | 0.8 | 1.0 | |
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | -- | 1100 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | -- | 130 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | -- | 13 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=325V,ID=10A, RG=25 | -- | 21 | -- | ns |
| Turn-on Rise Time | tr | VDD=325V,ID=10A, RG=25 | -- | 41 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=325V,ID=10A, RG=25 | -- | 82 | -- | ns |
| Turn-off Fall Time | tf | VDD=325V,ID=10A, RG=25 | -- | 43 | -- | ns |
| Total Gate Charge | Qg | VDS=520V,ID=10A, VGS=10V | -- | 29 | -- | nC |
| Gate-Source Charge | Qgs | VDS=520V,ID=10A, VGS=10V | -- | 6.2 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=520V,ID=10A, VGS=10V | -- | 13 | -- | nC |
| Characteristic | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Continuous Source Current | IS | -- | -- | -- | 10 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 40 | A |
| Diode Forward Voltage | VSD | IS=10A,VGS=0V | -- | -- | 1.3 | V |
| Reverse Recovery Time | Trr | IS=10A,VGS=0V, dIF/dt=100A/S | -- | 561 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=10A,VGS=0V, dIF/dt=100A/S | -- | 4.3 | -- | C |
2501091111_Hangzhou-Silan-Microelectronics-SVF10N65F_C467743.pdf
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