100V P channel MOSFET HUASHUO HSS0127 trench technology super low gate charge switching component
Key Attributes
Model Number:
HSS0127
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
900mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
650mΩ@10V,800mA
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
20pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
553pF@15V
Pd - Power Dissipation:
1W
Mfr. Part #:
HSS0127
Package:
SOT-23L
Product Description
Product Overview
The HSS0127 is a P-channel, 100V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full functional reliability approval. Key features include super low gate charge, excellent Cdv/dt effect decline, and availability as a green device.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | 20 | 20 | V | ||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -0.9 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -0.7 | A | |||
| IDM | Pulsed Drain Current2 | -1.8 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 125 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 80 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.0624 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-0.8A | 0.52 | 0.65 | ||
| VGS=-4.5V , ID=-0.4A | 0.56 | 0.7 | V | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | 4.5 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-80V , VGS=0V , TJ=25 | --- | 10 | uA | |
| VDS=-80V , VGS=0V , TJ=55 | --- | 100 | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=-5V , ID=-0.8A | 3 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 16 | 32 | ||
| Qg | Total Gate Charge | VDS=-15V , VGS=-4.5V , ID=-0.5A | 4.5 | --- | nC | |
| Qgs | Gate-Source Charge | 1.14 | --- | |||
| Qgd | Gate-Drain Charge | 1.5 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3 ID=-0.5A | 13.6 | --- | ns | |
| Tr | Rise Time | 6.8 | --- | |||
| Td(off) | Turn-Off Delay Time | 34 | --- | |||
| Tf | Fall Time | 3 | --- | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 553 | --- | pF | |
| Coss | Output Capacitance | 29 | --- | |||
| Crss | Reverse Transfer Capacitance | 20 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | -0.9 | A | |
| ISM | Pulsed Source Current2,4 | --- | -1.8 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
| Part Number | Package Code | Packaging |
|---|---|---|
| HSS0127 | SOT-23L | 3000/Tape&Reel |
2410121656_HUASHUO-HSS0127_C700960.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
