p channel mosfet HUASHUO HSM4435 designed for fast switching and high cell density trench technology
Key Attributes
Model Number:
HSM4435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
158pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.345nF@15V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
HSM4435
Package:
SOP-8
Product Description
Product Overview
The HSM4435 is a P-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSM4435 | Drain-Source Voltage (VDS) | -30 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) | VGS @ -10V, TA=25 | -9.5 | A | |||
| Continuous Drain Current (ID) | VGS @ -10V, TA=70 | -7.6 | A | |||
| Pulsed Drain Current (IDM) | -50 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 72.2 | mJ | ||||
| Avalanche Current (IAS) | -38 | A | ||||
| Total Power Dissipation (PD) | TA=25 | 3.1 | W | |||
| Total Power Dissipation (PD) | TA=70 | 2 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | (t10s) | 40 | /W | |||
| Thermal Resistance Junction-Ambient (RJA) | 75 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 24 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -30 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-6A | 18 | 20 | m | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | |||
| Total Gate Charge (Qg) | VDS=-15V , VGS=-4.5V , ID=-6A | 12.6 | nC | |||
| Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | 1345 | pF | |||
| Output Capacitance (Coss) | 194 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 158 | pF | ||||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -9.5 | A | |||
| Pulsed Source Current (ISM) | -50 | A | ||||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | |||
| Diode Characteristics | Reverse Recovery Time (trr) | IF=-6A , dI/dt=100A/s , TJ=25 | 16.3 | nS | ||
| Reverse Recovery Charge (Qrr) | 5.9 | nC | ||||
| Package | SOP-8 | |||||
| Packaging | 4000/Tape&Reel |
2410121455_HUASHUO-HSM4435_C508460.pdf
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