Hangzhou Silan Microelectronics SVD540T MOSFET with Pb Free and Halogen Free Environmental Compliance
Key Attributes
Model Number:
SVD540T
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
33A
Operating Temperature -:
-55℃~+150℃
RDS(on):
34mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 N-channel
Output Capacitance(Coss):
247pF
Input Capacitance(Ciss):
1.239nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
SVD540T
Package:
TO-220
Product Description
Product Overview
The SVD540T/D/K/F is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary flat low-voltage structure VDMOS technology. This advanced design minimizes on-state resistance, enhances switching performance, and provides robust high-energy pulse handling capabilities in avalanche and commutation modes. It is well-suited for applications such as electronic ballasts and low-power switched-mode power supplies (SMPS).
Product Attributes
- Brand: Silan Microelectronics
- Hazardous Substance Control: Pb free, Halogen free
Technical Specifications
| Part No. | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @ TC=25C | Drain Current (ID) @ TC=100C | Power Dissipation (PD) @ TC=25C | RDS(on)(typ.) @ VGS=10V | Breakdown Voltage (BVDSS) | Gate Threshold Voltage (VGS(th)) |
| SVD540T | TO-220-3L | 100 V | 20 V | 33 A | 23 A | 130 W | 34 m | 100 V | 2.0 - 4.0 V |
| SVD540DTR | TO-252-2L | 100 V | 20 V | 33 A | 23 A | 98 W | 34 m | 100 V | 2.0 - 4.0 V |
| SVD540K | TO-262-3L | 100 V | 20 V | 33 A | 23 A | 120 W | 34 m | 100 V | 2.0 - 4.0 V |
| SVD540F | TO-220F-3L | 100 V | 20 V | 33 A | 23 A | 33 W | 34 m | 100 V | 2.0 - 4.0 V |
2501091110_Hangzhou-Silan-Microelectronics-SVD540T_C393725.pdf
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