Switching MOSFET Hangzhou Silan Microelectronics SVT044R5NT with 40 Volt Drain Source Voltage Rating
Key Attributes
Model Number:
SVT044R5NT
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
178A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@10V;4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
401pF
Number:
-
Output Capacitance(Coss):
542pF
Input Capacitance(Ciss):
5.603nF
Pd - Power Dissipation:
178W
Gate Charge(Qg):
111nC@10V
Mfr. Part #:
SVT044R5NT
Package:
TO-220
Product Description
SVT044R5NT/D/L5 N-CHANNEL MOSFET
The SVT044R5NT/D/L5 is an N-channel enhancement mode power MOS field effect transistor utilizing SILAN's LVMOS technology. This advanced process and cell structure are optimized for minimal on-state resistance and superior switching performance, making it ideal for UPS and Power Management for Inverter Systems.
Product Attributes
- Brand: SILAN Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Certifications: Pb free (for SVT044R5NT), Halogen free (for SVT044R5NDTR, SVT044R5NL5TR)
Technical Specifications
| Part No. | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @ TC=25C | Drain Current (ID) @ TC=100C | Power Dissipation (PD) @ TC=25C | On-State Resistance (RDS(on)) @ VGS=10V, ID=50A | Typical Gate Charge (Qg) |
| SVT044R5NT | TO-220-3L | 40V | 20V | 178A | 112A | 178W | 3.5 - 4.5 m | 111nC |
| SVT044R5NDTR | TO-252-2L | 40V | 20V | 160A | 105A | 112W | 3.5 - 4.5 m | 111nC |
| SVT044R5NL5TR | PDFN-8-5X6X0.95-1.27 | 40V | 20V | 128A | 100A | 100W | 3.0 - 3.6 m | 111nC |
2501091110_Hangzhou-Silan-Microelectronics-SVT044R5NT_C2761793.pdf
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