Hangzhou Silan Microelectronics SVF6N60D N Channel MOSFET for DC DC Converters and PWM Motor Drivers
Key Attributes
Model Number:
SVF6N60D
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.35Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.7pF
Number:
1 N-channel
Output Capacitance(Coss):
83.6pF
Input Capacitance(Ciss):
690.7pF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
13.32nC@10V
Mfr. Part #:
SVF6N60D
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan proprietary F-CellTM high-voltage planar VDMOS technology. This technology enhances on-state resistance minimization, provides superior switching performance, and offers robust high energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free, Halogen free
Technical Specifications
| Part Number | Package | VDS (V) | VGS (V) | ID (A) @ TC=25C | RDS(on) () @ VGS=10V | PD (W) @ TC=25C | EAS (mJ) | RJC (/W) | RJA (/W) |
| SVF6N60F/FQ | TO-220F-3L / TO-220FQ-3L | 600 | 30 | 6 | 1.35 (typ.) | 125 | 343 | 2.98 | 62.5 |
| SVF6N60D | TO-252-2L | 600 | 30 | 6 | 1.35 (typ.) | 42 | 343 | 1.00 | 62.0 |
Electrical Characteristics (Tc=25C unless otherwise noted)
| Characteristics | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 600 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=600V, VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain-Source On State Resistance | RDS(on) | VGS=10V, ID=3A | -- | 1.35 | 1.5 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | -- | 690.7 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | -- | 83.6 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | -- | 2.7 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=300V, ID=6A, RG=25 | -- | 18.53 | -- | ns |
| Turn-on Rise Time | tr | VDD=300V, ID=6A, RG=25 | -- | 42.67 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=300V, ID=6A, RG=25 | -- | 33.20 | -- | ns |
| Turn-off Fall Time | tf | VDD=300V, ID=6A, RG=25 | -- | 28.13 | -- | ns |
| Total Gate Charge | Qg | VDS=480V, ID=6A, VGS=10V | -- | 13.32 | -- | nC |
| Gate-Source Charge | Qgs | VDS=480V, ID=6A, VGS=10V | -- | 4.13 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=480V, ID=6A, VGS=10V | -- | 4.19 | -- | nC |
Source-Drain Diode Ratings and Characteristics
| Characteristics | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Continuous Source Current | IS | -- | -- | -- | 6 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 24 | A |
| Diode Forward Voltage | VSD | IS=6A,VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=6A,VGS=0V, dIF/dt=100A/s | -- | 488 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=6A,VGS=0V, dIF/dt=100A/s | -- | 3 | -- | C |
2501091111_Hangzhou-Silan-Microelectronics-SVF6N60D_C68778.pdf
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