Fast Switching P Channel MOSFET HUASHUO HSH30P15 with Low Gate Charge and High Cell Density Design
Key Attributes
Model Number:
HSH30P15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
337pF
Number:
1 P-Channel
Output Capacitance(Coss):
744pF
Input Capacitance(Ciss):
5.99nF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
93nC@10V
Mfr. Part #:
HSH30P15
Package:
TO-263
Product Description
Product Overview
The HSH30P15 is a P-Channel Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HSH
- Product Type: P-Ch MOSFET
- Technology: Advanced Trench MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSH30P15 | Drain-Source Voltage (VDS) | -150 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID) @ TC=25, VGS @ -10V | -30 | A | ||||
| Continuous Drain Current (ID) @ TC=100, VGS @ -10V | -20 | A | ||||
| Pulsed Drain Current (IDM) | -100 | A | ||||
| Single Pulse Avalanche Energy (EAS) | VDD=-50V, VGS=-10V, L=0.1mH | 560 | mJ | |||
| Total Power Dissipation (PD) @ TC=25 | 100 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 62 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 1.22 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -150 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-20A | 56 | 70 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -2 | -3 | -4 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-150V , VGS=0V , TJ=25 | -1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | ±100 | nA | |||
| HSH30P15 | Forward Transconductance (gfs) | VDS=-10V , ID=-20A | 14 | S | ||
| Total Gate Charge (Qg) | VDS=-75V , VGS=-10V , ID=-20A | 93 | nC | |||
| Gate-Source Charge (Qgs) | 18 | nC | ||||
| Gate-Drain Charge (Qgd) | 14 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=-75V , VGS=-10V , RG=3.3, ID=-20A | 63 | ns | |||
| Rise Time (Tr) | 27 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 230 | ns | ||||
| HSH30P15 | Fall Time (Tf) | 80 | ns | |||
| Input Capacitance (Ciss) | VDS=-75V , VGS=0V , f=1MHz | 5990 | pF | |||
| Output Capacitance (Coss) | 744 | pF | ||||
| HSH30P15 | Reverse Transfer Capacitance (Crss) | 337 | pF | |||
| HSH30P15 | Continuous Source Current (IS) | VG=VD=0V , Force Current | -30 | A | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.3 | V |
2410122016_HUASHUO-HSH30P15_C22359322.pdf
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