Dual N Channel Mosfet with 30 Volt Drain Source Voltage HUASHUO HSBA3204 featuring trench technology
Key Attributes
Model Number:
HSBA3204
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
6.5mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
131pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.317nF@15V
Pd - Power Dissipation:
19.2W
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
HSBA3204
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3204 is a dual N-channel, 30V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for various applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Its advanced trench technology ensures super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS
- Product Type: Dual N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 35 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 24.7 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 10.6 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 8.5 | A | |||
| IDM | Pulsed Drain Current2 | 92 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 57.8 | mJ | |||
| IAS | Avalanche Current | 34 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 19.2 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 1.42 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 6.5 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.027 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=12A | 6.5 | 8.5 | m | |
| VGS=4.5V , ID=10A | 11 | 14 | VGS | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.5 | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -5.8 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=15A | 38 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.7 | 2.9 | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=12A | 12.6 | 17.6 | nC | |
| Qgs | Gate-Source Charge | 4.2 | 5.9 | |||
| Qgd | Gate-Drain Charge | 5.1 | 7.1 | |||
| td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=12A | 4.6 | 9.2 | ns | |
| tr | Rise Time | 12.2 | 22 | |||
| td(off) | Turn-Off Delay Time | 26.6 | 53 | |||
| tf | Fall Time | 8 | 16 | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1317 | 1844 | pF | |
| Coss | Output Capacitance | 163 | 228 | |||
| Crss | Reverse Transfer Capacitance | 131 | 183 | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 15 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| trr | Reverse Recovery Time | IF=30A , dI/dt=100A/s , TJ=25 | 9.2 | --- | nS | |
| Qrr | Reverse Recovery Charge | 2 | --- | nC | ||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=34A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121448_HUASHUO-HSBA3204_C7543703.pdf
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