N Channel Power MOSFET Hangzhou Silan Microelectronics SVF20NE50PN for AC DC and DC DC Power Applications
Key Attributes
Model Number:
SVF20NE50PN
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
RDS(on):
180mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12.03pF
Output Capacitance(Coss):
425pF
Input Capacitance(Ciss):
3.504nF
Pd - Power Dissipation:
252W
Gate Charge(Qg):
58.38nC@10V
Mfr. Part #:
SVF20NE50PN
Package:
TO-3P-3
Product Description
Product Overview
The SVF20NE50PN is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching performance, and provide superior high-energy pulse withstand capability in avalanche and commutation modes. This device is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Part Number: SVF20NE50PN
- Package: TO-3P
- Marking: 20NE50
- Material: Pb free
- Packing: Tube
Technical Specifications
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 500 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=500V, VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=25V, VDS=0V | -- | -- | 100 | A |
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 2.0 | -- | 4.0 | V |
| On State Resistance | RDS(on) | VGS=10V, ID=10.0A | -- | 0.18 | 0.27 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | -- | 3504.0 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHZ | -- | 425.0 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHZ | -- | 12.03 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=250V, RG=25, ID=20.0A | -- | 80.67 | -- | ns |
| Turn-on Rise Time | tr | VDD=250V, RG=25, ID=20.0A | -- | 150.67 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=250V, RG=25, ID=20.0A | -- | 198.67 | -- | ns |
| Turn-off Fall Time | tf | VDD=250V, RG=25, ID=20.0A | -- | 112.0 | -- | ns |
| Total Gate Charge | Qg | VDD=400V,VGS=10V, ID=20.0A | -- | 58.38 | -- | nC |
| Gate-Source Charge | Qgs | VDD=400V,VGS=10V, ID=20.0A | -- | 16.89 | -- | nC |
| Gate-Drain Charge | Qgd | VDD=400V,VGS=10V, ID=20.0A | -- | 18.33 | -- | nC |
| Source Current | IS | -- | -- | -- | 20.0 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 80.0 | A |
| Diode Forward Voltage | VSD | IS=20.0A,VGS=0V | -- | -- | 1.3 | V |
| Reverse Recovery Time | Trr | IS=20.0A,VGS=0V, dIF/dt=100A/S | -- | 577.53 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=20.0A,VGS=0V, dIF/dt=100A/S | -- | 7.78 | -- | C |
| Drain-Source Voltage | VDS | -- | -- | -- | 500 | V |
| Gate-Source Voltage | VGS | -- | -- | -- | 30 | V |
| Drain Current | ID | TC=25C | -- | -- | 20.0 | A |
| Drain Current | ID | TC=100C | -- | -- | 12.6 | A |
| Drain Current Pulsed | IDM | -- | -- | -- | 80.0 | A |
| Power Dissipation | PD | TC=25C | -- | -- | 252 | W |
| Power Dissipation Derate | -- | above 25C | -- | -- | 2.02 | W/C |
| Single Pulsed Avalanche Energy | EAS | L=30mH, IAS=11.60A, VDD=165V, RG=25, starting TJ=25C | -- | 2812 | -- | mJ |
| Operation Junction Temperature Range | TJ | -- | -55 | -- | +150 | C |
| Storage Temperature Range | Tstg | -- | -55 | -- | +150 | C |
| Thermal Resistance, Junction-to-Case | RJC | -- | -- | 0.50 | -- | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | -- | -- | 50 | -- | C/W |
2501091110_Hangzhou-Silan-Microelectronics-SVF20NE50PN_C2897710.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
