power transistor Hangzhou Silan Microelectronics SVF7N60CF with TO 220F 3L package and 7 amp rating
Key Attributes
Model Number:
SVF7N60CF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
960mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.7pF
Number:
1 N-channel
Output Capacitance(Coss):
96pF
Input Capacitance(Ciss):
770pF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
21.1nC@10V
Mfr. Part #:
SVF7N60CF
Package:
TO-220F-3
Product Description
Product Overview
The SVF7N60CF/S/K/MJ/D/T is an N-channel enhancement mode power MOS field effect transistor developed using Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology enhances performance by minimizing on-state resistance, improving switching characteristics, and providing superior high-energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Certifications: Halogen free, Pb free
Technical Specifications
| Part No. | Package | 7A, 600V | RDS(on) (typ) @ VGS=10V | Low Gate Charge | Low Crss | Fast Switching | Improved dv/dt Capability | Hazardous Substance Control | Packing Type |
| SVF7N60CF | TO-220F-3L | 7A, 600V | 0.96 | Yes | Yes | Yes | Yes | Halogen free | Tube |
| SVF7N60CS | TO-263-2L | 7A, 600V | 0.96 | Yes | Yes | Yes | Yes | Halogen free | Tube |
| SVF7N60CSTR | TO-263-2L | 7A, 600V | 0.96 | Yes | Yes | Yes | Yes | Halogen free | Tape & Reel |
| SVF7N60CK | TO-262-3L | 7A, 600V | 0.96 | Yes | Yes | Yes | Yes | Halogen free | Tube |
| SVF7N60CMJ | TO-251J-3L | 7A, 600V | 0.96 | Yes | Yes | Yes | Yes | Halogen free | Tube |
| SVF7N60CD | TO-252-2L | 7A, 600V | 0.96 | Yes | Yes | Yes | Yes | Halogen free | Tube |
| SVF7N60CDTR | TO-252-2L | 7A, 600V | 0.96 | Yes | Yes | Yes | Yes | Halogen free | Tape & Reel |
| SVF7N60CT | TO-220-3L | 7A, 600V | 0.96 | Yes | Yes | Yes | Yes | Pb free | Tube |
| Characteristics | Symbol | SVF7N60CF | SVF7N60CS/K | SVF7N60CMJ | SVF7N60CD | SVF7N60CT | Unit |
| Drain-Source Voltage | VDS | 600 | 600 | 600 | 600 | 600 | V |
| Gate-Source Voltage | VGS | 30 | 30 | 30 | 30 | 30 | V |
| Drain Current (TC=25C) | ID | 7.0 | 7.0 | 7.0 | 7.0 | 7.0 | A |
| Drain Current (TC=100C) | ID | 4.0 | 4.0 | 4.0 | 4.0 | 4.0 | A |
| Drain Current Pulsed | IDM | 28 | 28 | 28 | 28 | 28 | A |
| Power Dissipation (TC=25C) | PD | 45 | 122 | 93 | 90 | 145 | W |
| Single Pulsed Avalanche Energy (Note 1) | EAS | 490 | 490 | 490 | 490 | 490 | mJ |
| Operation Junction Temperature Range | TJ | -55+150 | -55+150 | -55+150 | -55+150 | -55+150 | C |
| Storage Temperature Range | Tstg | -55+150 | -55+150 | -55+150 | -55+150 | -55+150 | C |
| Characteristics | Symbol | SVF7N60CF | SVF7N60CS/K | SVF7N60CMJ | SVF7N60CD | SVF7N60CT | Unit |
| Thermal Resistance, Junction-to-Case | RJC | 2.78 | 1.02 | 1.34 | 1.39 | 0.86 | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | 62.5 | 62.0 | 62.0 | 62.5 | C/W |
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 600 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=600V, VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain- Source On State Resistance | RDS(on) | VGS=10V, ID=3.5A | -- | 0.96 | 1.2 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | -- | 592 | 770 | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHZ | -- | 96 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHZ | -- | 8.7 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=300V, ID=7.0A, RG=25 (Note 2,3) | -- | 15.5 | -- | ns |
| Turn-on Rise Time | tr | VDD=300V, ID=7.0A, RG=25 (Note 2,3) | -- | 32.7 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=300V, ID=7.0A, RG=25 (Note 2,3) | -- | 52.2 | -- | ns |
| Turn-off Fall Time | tf | VDD=300V, ID=7.0A, RG=25 (Note 2,3) | -- | 31.5 | -- | ns |
| Total Gate Charge | Qg | VDS=480V, ID=7.0A, VGS=10V (Note 2,3) | -- | 21.1 | -- | nC |
| Gate-Source Charge | Qgs | VDS=480V, ID=7.0A, VGS=10V (Note 2,3) | -- | 4.53 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=480V, ID=7.0A, VGS=10V (Note 2,3) | -- | 10.0 | -- | nC |
| Continuous Source Current | IS | Integral Reverse P-N Junction Diode in the MOSFET | -- | -- | 7.0 | A |
| Pulsed Source Current | ISM | Integral Reverse P-N Junction Diode in the MOSFET | -- | -- | 28 | A |
| Diode Forward Voltage | VSD | IS=7.0A,VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=7.0A,VGS=0V, dIF/dt=100A/S | -- | 482 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=7.0A,VGS=0V, dIF/dt=100A/S | -- | 2.9 | -- | C |
2501091111_Hangzhou-Silan-Microelectronics-SVF7N60CF_C414162.pdf
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