Dual N channel 100V fast switching MOSFET HUASHUO HSBB0210 with low Rds on and super low gate charge
Key Attributes
Model Number:
HSBB0210
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.8A
RDS(on):
130mΩ@4.5V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
2.5pF@50V
Number:
2 N-Channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
180pF@50V
Gate Charge(Qg):
3.5nC@10V
Mfr. Part #:
HSBB0210
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB0210 is a dual N-channel 100V fast switching MOSFET featuring advanced trench MOS technology. It offers low Rds(on) and super low gate charge, making it suitable for hard switching and high-speed circuit applications. This device is 100% EAS guaranteed and available in a green device option. Ideal for portable equipment and battery-powered systems.
Product Attributes
- Brand: HS
- Technology: Advanced Trench MOS
- Device Type: Dual N-CH MOSFET
- Environmental: Green Device Available
- EAS Guarantee: 100%
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBB0210 | Drain-Source Voltage (VDS) | 100 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) @ TC=25, VGS @ 10V | 8 | A | ||||
| Continuous Drain Current (ID) @ TC=100, VGS @ 10V | 5 | A | ||||
| Continuous Drain Current (ID) @ TA=25, VGS @ 10V | 2.8 | A | ||||
| Continuous Drain Current (ID) @ TA=70, VGS @ 10V | 2.3 | A | ||||
| Pulsed Drain Current (IDM) | 24 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 0.22 | mJ | ||||
| Avalanche Current (IAS) | 2.1 | A | ||||
| Total Power Dissipation (PD) @ TC=25 | 12.5 | W | ||||
| Total Power Dissipation (PD) @ TA=25 | 1.5 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| HSBB0210 | Thermal Resistance Junction-ambient (RJA) | --- | 85 | /W | ||
| Thermal Resistance Junction-Case (RJC) | --- | 10 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 100 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=2A | --- | 89 | 100 | m | |
| VGS=4.5V , ID=2A | --- | 113 | 130 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.3 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=80V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=80V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 5 | --- | ||
| Total Gate Charge (Qg) | VDS=50V , VGS=10V , ID=2A | --- | 3.5 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | 0.7 | --- | |||
| Gate-Drain Charge (Qgd) | --- | 0.9 | --- | |||
| Turn-On Delay Time (Td(on)) | VDD=50V , VGS=10V , RG=3 ID=1A | --- | 4.8 | --- | ns | |
| Rise Time (Tr) | --- | 19 | --- | ns | ||
| Turn-Off Delay Time (Td(off)) | --- | 17 | --- | ns | ||
| Fall Time (Tf) | --- | 6.2 | --- | ns | ||
| Input Capacitance (Ciss) | VDS=50V , VGS=0V , f=1MHz | --- | 180 | --- | pF | |
| Output Capacitance (Coss) | --- | 31 | --- | pF | ||
| Reverse Transfer Capacitance (Crss) | --- | 2.5 | --- | pF | ||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 2.8 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
Applications
- Portable Equipment
- Battery Powered Systems
- Hard Switching and High-Speed Circuit
2410121641_HUASHUO-HSBB0210_C5128202.pdf
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