Hangzhou Silan Microelectronics SVF4N60F N channel MOSFET for DC DC Converters and PWM Motor Drivers
Product Overview
The SVF4N60D/F/T/M is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse handling capabilities in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Certifications: Pb free, Halogen free
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @ TC=25C | Drain Current (ID) @ TC=100C | Power Dissipation (PD) @ TC=25C | RDS(on)(typ.) @ VGS=10V | BVDSS | IDSS @ VDS=600V, VGS=0V | IGSS @ VGS=30V, VDS=0V | VGS(th) @ ID=250A | Ciss @ VDS=25V, f=1MHz | Coss @ VDS=25V, f=1MHz | Crss @ VDS=25V, f=1MHz | td(on) @ VDD=300V, ID=4A | tr @ VDD=300V, ID=4A | td(off) @ VDD=300V, ID=4A | tf @ VDD=300V, ID=4A | Qg @ VDS=480V, ID=4A | Qgs @ VDS=480V, ID=4A | Qgd @ VDS=480V, ID=4A | RJC | RJA |
| SVF4N60F | TO-220F-3L | 600V | 30V | 4.0A | 2.5A | 33W | 2.0 | 600V | 1.0A | 100nA | 2.0-4.0V | 433pF | 55pF | 4.5pF | 10ns | 26ns | 29ns | 26ns | 13nC | 2.8nC | 6.2nC | 3.85C/W | 62.5C/W |
| SVF4N60D/M | TO-251D-3L | 600V | 30V | 4.0A | 2.5A | 77W | 2.0 | 600V | 1.0A | 100nA | 2.0-4.0V | 433pF | 55pF | 4.5pF | 10ns | 26ns | 29ns | 26ns | 13nC | 2.8nC | 6.2nC | 1.61C/W | 62.0C/W |
| SVF4N60T | TO-220-3L | 600V | 30V | 4.0A | 2.5A | 110W | 2.0 | 600V | 1.0A | 100nA | 2.0-4.0V | 433pF | 55pF | 4.5pF | 10ns | 26ns | 29ns | 26ns | 13nC | 2.8nC | 6.2nC | 1.14C/W | 62.5C/W |
2501091110_Hangzhou-Silan-Microelectronics-SVF4N60F_C28532.pdf
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