Fast switching MOSFET HUASHUO HSP0026 featuring high cell density trench technology and low conduction losses
Key Attributes
Model Number:
HSP0026
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
16mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
125pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
1.93nF@15V
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
HSP0026
Package:
TO-220
Product Description
Product Overview
The HSP0026 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 50 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ 10V1 | 22 | A | |||
| IDM | Pulsed Drain Current2 | 75 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 780 | mJ | |||
| IAS | Avalanche Current | 18 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 62.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient 1(t≤10S) | --- | 50 | /W | ||
| RJA | Thermal Resistance Junction-ambient 1(Steady State) | --- | 2 | /W | ||
| Electrical Characteristics (TJ=25 °C, unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25°C , ID=1mA | 0.08 | --- | V/°C | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=9A | 16 | 22 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=7A | 20 | 28 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | -5.5 | --- | mV/°C | ||
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25°C | --- | 10 | µA | |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=55°C | --- | 100 | µA | |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=9A | 28 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.6 | --- | Ω | |
| Qg | Total Gate Charge (10V) | VDS=80V , VGS=10V , ID=7A | 36 | --- | nC | |
| Qgs | Gate-Source Charge | 5 | --- | nC | ||
| Qgd | Gate-Drain Charge | 10 | --- | nC | ||
| td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.3Ω ID=7A | 11.5 | --- | ns | |
| tr | Rise Time | 29 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 42 | --- | ns | ||
| tf | Fall Time | 18 | --- | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1930 | --- | pF | |
| Coss | Output Capacitance | 245 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 125 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,6 | VG=VD=0V , Force Current | --- | 50 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25°C | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=7A , dI/dt=100A/µs , TJ=25°C | 48 | --- | nS | |
| Qrr | Reverse Recovery Charge | 29 | --- | nC | ||
2410121642_HUASHUO-HSP0026_C7543710.pdf
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