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quality High Cell Density N Channel MOSFET HUASHUO HSBA4016 Designed for Fast Switching and Low Gate Charge factory
quality High Cell Density N Channel MOSFET HUASHUO HSBA4016 Designed for Fast Switching and Low Gate Charge factory

High Cell Density N Channel MOSFET HUASHUO HSBA4016 Designed for Fast Switching and Low Gate Charge

Key Attributes
Model Number: HSBA4016
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
HSBA4016
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA4016 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval.

Product Attributes

  • Brand: HS
  • Product Type: N-Channel MOSFET
  • Technology: Advanced high cell density Trench technology
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 75 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 58 A
IDM Pulsed Drain Current2 150 A
EAS Single Pulse Avalanche Energy3 110.5 mJ
IAS Avalanche Current 47 A
PD@TC=25 Total Power Dissipation4 52.1 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 2.4 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 40 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=10A 4.9 6.5 mΩ
VGS=4.5V , ID=5A 6.4 8.5 mΩ
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 1.0 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25 --- 1 µA
VDS=32V , VGS=0V , TJ=55 --- 5 µA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=10V , ID=5A 27 --- S
Qg Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=10A 20 --- nC
Qgs Gate-Source Charge 5.8 --- nC
Qgd Gate-Drain Charge 9.5 --- nC
Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3Ω ID=1A 15.2 --- ns
Tr Rise Time 8.8 --- ns
Td(off) Turn-Off Delay Time 74 --- ns
Tf Fall Time 7 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 2354 --- pF
Coss Output Capacitance 215 --- pF
Crss Reverse Transfer Capacitance 175 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 70 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- 1 V
Ordering Information
Part Number Package code Packaging
HSBA4016 PRPAK5*6 3000/Tape&Reel

2410121503_HUASHUO-HSBA4016_C701054.pdf
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