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quality 650V N channel MOSFET Hangzhou Silan Microelectronics SVF5N65F for DC DC Converters and Motor Drivers factory
quality 650V N channel MOSFET Hangzhou Silan Microelectronics SVF5N65F for DC DC Converters and Motor Drivers factory

650V N channel MOSFET Hangzhou Silan Microelectronics SVF5N65F for DC DC Converters and Motor Drivers

Key Attributes
Model Number: SVF5N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.5pF
Number:
1 N-channel
Output Capacitance(Coss):
58pF
Input Capacitance(Ciss):
471pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
13.63nC@10V
Mfr. Part #:
SVF5N65F
Package:
TO-220
Product Description

SVF5N65D/F N-CHANNEL MOSFET

The SVF5N65D/F is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced process and cell structure are engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. These devices are widely adopted in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.

Product Attributes

  • Brand: Silan Microelectronics
  • Product Series: SVF5N65D/F
  • Hazardous Substance Control: Halogen free (SVF5N65DTR), Pb free (SVF5N65F)
  • Certifications: Not explicitly mentioned in the provided text.

Technical Specifications

CharacteristicSymbolSVF5N65DSVF5N65FUnit
Drain-Source VoltageVDS650650V
Gate-Source VoltageVGS3030V
Drain Current (TC=25C)ID5.05.0A
Drain Current (TC=100C)ID3.13.1A
Drain Current PulsedIDM2020A
Power Dissipation (TC=25C)PD7930W
Power Dissipation Derate above 25C0.530.24W/C
Single Pulsed Avalanche Energy (Note 1)EAS242242mJ
Operation Junction Temperature RatingTJ-55+150-55+150C
Storage Temperature RatingTstg-55+150-55+150C
Thermal Resistance, Junction-to-CaseRJC1.904.17C/W
Thermal Resistance, Junction-to-AmbientRJA62.062.5C/W
Drain Source Breakdown VoltageBVDSS650650V
Drain-Source Leakage CurrentIDSS11A
Gate-Source Leakage CurrentIGSS100100nA
Gate Threshold VoltageVGS(th)2.0 -- 4.02.0 -- 4.0V
On State ResistanceRDS(on)2.1 -- 2.52.1 -- 2.5
Input CapacitanceCiss471471pF
Output CapacitanceCoss5858pF
Reverse Transfer CapacitanceCrss5.55.5pF
Turn-on Delay Timetd(on)13.8713.87ns
Turn-on Rise Timetr31.9331.93ns
Turn-off Delay Timetd(off)43.5343.53ns
Turn-off Fall Timetf33.7333.73ns
Total Gate ChargeQg13.6313.63nC
Gate-Source ChargeQgs2.962.96nC
Gate-Drain ChargeQg d6.866.86nC
Continuous Source CurrentIS55A
Pulsed Source CurrentISM2020A
Diode Forward VoltageVSD1.41.4V
Reverse Recovery TimeTrr476476ns
Reverse Recovery ChargeQrr2.32.3C

Notes:
1. L=30mH, IAS=3.78A, VDD=100V, RG=25, starting TJ=25C;
2. Pulse Test: Pulse width 300s, Duty cycle2%;
3. Essentially independent of operating temperature.


2501091111_Hangzhou-Silan-Microelectronics-SVF5N65F_C601611.pdf

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