55V 110A N channel MOSFET transistor Hangzhou Silan Microelectronics SVD3205T for electronic ballast and SMPS
Key Attributes
Model Number:
SVD3205T
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
169pF
Number:
1 N-channel
Output Capacitance(Coss):
740pF
Input Capacitance(Ciss):
2.365nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
SVD3205T
Package:
TO-220F-3
Product Description
Product Overview
The SVD3205T/F/S is an N-channel enhancement mode power MOS field-effect transistor from Silan Microelectronics. Utilizing proprietary flat low-voltage structure VDMOS technology, it offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse capability in avalanche and commutation modes. This makes it ideal for applications such as electronic ballasts and low-power Switched-Mode Power Supplies (SMPS).
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free, Halogen free
- Certifications: Not explicitly mentioned beyond hazardous substance control
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | RDS(on)(typ.) @ VGS=10V | Continuous Drain Current (ID) @ TC=25C | Power Dissipation (PD) @ TC=25C |
| SVD3205T | TO-220-3L | 55V | 20V | 7.5m | 110A | 200W |
| SVD3205F | TO-220F-3L | 55V | 20V | 7.5m | 110A | 58W |
| SVD3205S | TO-263-2L | 55V | 20V | 7.5m | 110A | 190W |
| SVD3205STR | TO-263-2L | 55V | 20V | 7.5m | 110A | 190W |
2501091111_Hangzhou-Silan-Microelectronics-SVD3205T_C400186.pdf
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