Fast Switching P Channel MOSFET HUASHUO AO3415 Featuring 20V Rating and High Cell Density Trench Technology
Key Attributes
Model Number:
AO3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
205pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
900pF@15V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
AO3415
Package:
SOT-23L
Product Description
Product Overview
The AO3415 is a P-channel 20V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and features full functional reliability approval, super low gate charge, and ESD protection (2KV). It also boasts excellent Cdv/dt effect decline and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi (implied by www.hs-semi.cn)
- Product Type: P-Channel MOSFET
- Voltage Rating: 20V
- Switching Speed: Fast Switching
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- ESD Protection: 2KV
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 8 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -4.3 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -3.5 | A | |||
| IDM | Pulsed Drain Current2 | -14 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.25 | W | |||
| PD@TA=70 | Total Power Dissipation3 | 0.84 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 100 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t 10s) | 95 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.014 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-3.5A | 35 | 45 | m | |
| VGS=-2.5V , ID=-3A | 47 | 55 | V | |||
| VGS=-1.8V , ID=-2A | 67 | 80 | V | |||
| VDS = -20 V, ID = -4.3 A | 45 | m | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.45 | -0.9 | V | |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | 3.95 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-16V , VGS=0V , TJ=55 | -5 | |||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 12.8 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-3A | 8.4 | 11 | nC | |
| Qgs | Gate-Source Charge | 2.4 | ||||
| Qgd | Gate-Drain Charge | 1.5 | ||||
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 9 | 20 | ns | |
| Tr | Rise Time | 4 | 10 | |||
| Td(off) | Turn-Off Delay Time | 42 | 85 | |||
| Tf | Fall Time | 5 | 10 | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 900 | pF | ||
| Coss | Output Capacitance | 155 | ||||
| Crss | Reverse Transfer Capacitance | 205 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -4.3 | A | ||
| ISM | Pulsed Source Current2,4 | -14 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
| trr | Reverse Recovery Time | IF=-3A , di/dt=100A/s , TJ=25 | 21.8 | nS | ||
| Qrr | Reverse Recovery Charge | 6.9 | nC | |||
Ordering Information
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| AO3415 | SOT-23L | Tape&Reel | 3000 |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121532_HUASHUO-AO3415_C700955.pdf
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