Fast switching P channel MOSFET 40V voltage rating HUASHUO HSL4113 designed for power conversion solutions
Key Attributes
Model Number:
HSL4113
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
40mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
80pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.004nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
-
Mfr. Part #:
HSL4113
Package:
SOT-223
Product Description
Product Overview
The HSL4113 is a P-channel, 40V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This RoHS and Green Product compliant MOSFET is 100% EAS guaranteed and features super low gate charge and excellent Cdv/dt effect decline. It is designed for reliable performance in demanding applications.
Product Attributes
- Brand: HSL
- Product Type: P-Channel MOSFET
- Voltage Rating: 40V
- Switching Speed: Fast
- Technology: Trench
- Compliance: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -5 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -3.5 | A | |||
| IDM | Pulsed Drain Current2 | -15 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 85 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 48 | /W | ||
| P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.012 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-4A | --- | --- | 40 | m |
| VGS=-4.5V , ID=-3A | --- | --- | 70 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.32 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=-32V , VGS=0V , TJ=55 | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V , ID=-6A | --- | 12 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 13 | --- | |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-4A | --- | 9 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.54 | --- | ||
| Qgd | Gate-Drain Charge | --- | 3.1 | --- | ||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | --- | 19.2 | --- | ns |
| tr | Rise Time | --- | 12.8 | --- | ||
| td(off) | Turn-Off Delay Time | --- | 48.6 | --- | ||
| tf | Fall Time | --- | 4.6 | --- | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 1004 | --- | pF |
| Coss | Output Capacitance | --- | 108 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 80 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -7.5 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | -15 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1 | V |
2410121503_HUASHUO-HSL4113_C7543691.pdf
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