Hangzhou Silan Microelectronics SVF5N60D MOSFET for High Energy Pulse Handling in Power Electronics
Key Attributes
Model Number:
SVF5N60D
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Input Capacitance(Ciss):
463pF
Output Capacitance(Coss):
58pF
Pd - Power Dissipation:
90W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SVF5N60D
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The SVF5N60F/D/K is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. Engineered for optimal performance, it offers reduced on-state resistance, superior switching characteristics, and enhanced high-energy pulse handling in avalanche and commutation modes. This device is ideal for AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free, Halogen free
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @TC=25C | Drain Current (ID) @TC=100C | Drain Current Pulsed (IDM) | Power Dissipation (PD) @TC=25C | RDS(on)(typ) @VGS=10V | BVDSS @ID=250A | TJ Range | Tstg Range |
| SVF5N60K | TO-262-3L | 600V | 30V | 5.0A | 3.1A | 20A | 110W | 1.8 | 600V | -55+150C | -55+150C |
| SVF5N60F | TO-220F-3L | 600V | 30V | 5.0A | 3.1A | 20A | 31W | 1.8 | 600V | -55+150C | -55+150C |
| SVF5N60D | TO-252-2L | 600V | 30V | 5.0A | 3.1A | 20A | 90W | 1.8 | 600V | -55+150C | -55+150C |
| Characteristics | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain-Source On State Resistance | RDS(on) | VGS=10V, ID=2.5A | -- | 1.8 | 2.15 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | -- | 463 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | -- | 58 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | -- | 5.0 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=300V, ID=5.0A, RG=24 | -- | 13 | -- | ns |
| Turn-on Rise Time | tr | VDD=300V, ID=5.0A, RG=24 | -- | 31 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=300V, ID=5.0A, RG=24 | -- | 42 | -- | ns |
| Turn-off Fall Time | tf | VDD=300V, ID=5.0A, RG=24 | -- | 33 | -- | ns |
| Total Gate Charge | Qg | VDS=480V, ID=5.0A, VGS=10V | -- | 13 | -- | nC |
| Gate-Source Charge | Qgs | VDS=480V, ID=5.0A, VGS=10V | -- | 2.9 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=480V, ID=5.0A, VGS=10V | -- | 6.7 | -- | nC |
| Continuous Source Current | IS | -- | -- | -- | 5 | A |
| Diode Forward Voltage | VSD | IS=5.0A, VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=5.0A, VGS=0V, dIF/dt=100A/s | -- | 450 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=5.0A, VGS=0V, dIF/dt=100A/s | -- | 2.2 | -- | C |
2501091111_Hangzhou-Silan-Microelectronics-SVF5N60D_C68776.pdf
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