Fast switching MOSFET HUASHUO HSU0107 P channel 100V with trench technology and low RDS ON resistance
Key Attributes
Model Number:
HSU0107
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
700mΩ@4.5V,0.5A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
20pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
553pF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
4.5nC@4.5V
Mfr. Part #:
HSU0107
Package:
TO-252
Product Description
Product Overview
The HSU0107 is a P-channel, 100V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and is available with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFET
- Voltage Rating: 100V
- Switching Speed: Fast Switching
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -4.1 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -2.6 | A | |||
| IDM | Pulsed Drain Current2 | -8.2 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 1 | --- | 62 | /W | |
| RJC | Thermal Resistance Junction-Case | 1 | --- | 6 | /W | |
| VDS | -100 | V | ||||
| RDS(ON),max | 0.52 | 0.65 | m | |||
| ID | -4.1 | A | ||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.0624 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-1A | 0.52 | 0.65 | ||
| VGS=-4.5V , ID=-0.5A | 0.56 | 0.7 | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 4.5 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-80V , VGS=0V , TJ=25 | --- | 10 | uA | |
| VDS=-80V , VGS=0V , TJ=55 | --- | 100 | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-5V , ID=-1A | 3 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 16 | 32 | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-1A | 4.5 | --- | nC | |
| Qgs | Gate-Source Charge | 1.14 | --- | |||
| Qgd | Gate-Drain Charge | 1.5 | --- | |||
| td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3, ID=-1A | 13.6 | --- | ns | |
| tr | Rise Time | 6.8 | --- | |||
| td(off) | Turn-Off Delay Time | 34 | --- | |||
| tf | Fall Time | 3 | --- | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 553 | --- | pF | |
| Coss | Output Capacitance | 29 | --- | |||
| Crss | Reverse Transfer Capacitance | 20 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | -4.1 | A | |
| ISM | Pulsed Source Current2,4 | --- | -8.2 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSU0107 | TO-252 | 2500/Tape&Reel | ||||
2410121655_HUASHUO-HSU0107_C5341700.pdf
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