Power Management N Channel MOSFET HUASHUO HSBB3072 Featuring Fast Switching and Low Gate Charge Technology
Key Attributes
Model Number:
HSBB3072
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
229pF
Number:
1 N-channel
Output Capacitance(Coss):
1.3nF
Pd - Power Dissipation:
42W
Input Capacitance(Ciss):
2.86nF
Gate Charge(Qg):
26nC@4.5V
Mfr. Part #:
HSBB3072
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB3072 is a N-Channel 30V Fast Switching MOSFET designed for power management applications. It features a super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology. This MOSFET is ideal for power management in desktop computers, DC/DC converters, and isolated DC/DC converters in telecom and industrial sectors. It boasts 100% EAS guaranteed and is available as a Green Device.Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: 100% EAS Guaranteed, Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| RDS(ON),typ | Static Drain-Source On-Resistance | VGS=10V , ID=20A | 2 | 2.4 | m | |
| ID | Continuous Drain Current | VGS @ 10V, TC=25 | 100 | A | ||
| Continuous Drain Current | VGS @ 10V, TC=100 | 65 | A | |||
| IDM | Pulsed Drain Current | 240 | A | |||
| EAS | Single Pulse Avalanche Energy | 80 | mJ | |||
| IAS | Avalanche Current | 40 | A | |||
| PD@TC=25 | Total Power Dissipation | 42 | W | |||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 100 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 65 | A | |||
| IDM | Pulsed Drain Current | 240 | A | |||
| EAS | Single Pulse Avalanche Energy | 80 | mJ | |||
| IAS | Avalanche Current | 40 | A | |||
| PD@TC=25 | Total Power Dissipation | 42 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 70 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 3 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.021 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | 2 | 2.4 | m | |
| VGS=4.5V , ID=20A | 2.9 | 3.8 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.7 | 2.3 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -5.73 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=20A | 40 | --- | S | |
| Rg | Gate Resistance | VDS=10V , VGS=0V , f=1MHz | 2 | --- | ||
| Qg | Total Gate Charge | VDS=15V , VGS=4.5V , ID=20A | 26 | --- | nC | |
| Qgs | Gate-Source Charge | 8 | --- | nC | ||
| Qgd | Gate-Drain Charge | 11 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=20A | 11 | --- | ns | |
| Tr | Rise Time | 46 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 28.6 | --- | ns | ||
| Tf | Fall Time | 7.1 | --- | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 2860 | --- | pF | |
| Coss | Output Capacitance | 1300 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 229 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | 85 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| Applications | ||||||
| Power Management in Desktop Computer or DC/DC Converters | ||||||
| Isolated DC/DC Converters in Telecom and Industrial. | ||||||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBB3072 | PRPAK3*3 | 3000/Tape&Reel | ||||
2410121502_HUASHUO-HSBB3072_C2903562.pdf
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