High cell density trench n channel mosfet hsba3052 suitable for fast switching dc dc converter needs
Key Attributes
Model Number:
HSBA3052
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.9mΩ@4.5V,15A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
41pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
814pF@15V
Pd - Power Dissipation:
24W
Gate Charge(Qg):
8nC@4.5V
Mfr. Part #:
HSBA3052
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3052 is a high cell density Trench N-Channel MOSFET designed for fast switching applications, particularly in DC/DC converters. It offers excellent RDS(ON) and low gate charge, contributing to efficient power management. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: HS-Semi
- Model: HSBA3052
- Channel Type: N-Channel
- Technology: Advanced high cell density Trench
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 52 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 33 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 25 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 20 | A | |||
| IDM | Pulsed Drain Current2 | 125 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 28.8 | mJ | |||
| IAS | Avalanche Current | 24 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 24 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 50 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 4.6 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 5 | 6.3 | m | |
| VGS=4.5V , ID=15A | 6.9 | 9 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=20A | 67 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.7 | --- | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=15A | 8 | --- | nC | |
| Qgs | Gate-Source Charge | 2.4 | --- | |||
| Qgd | Gate-Drain Charge | 3.2 | --- | |||
| td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=15A | 7.1 | --- | ns | |
| tr | Rise Time | 40 | --- | |||
| td(off) | Turn-Off Delay Time | 15 | --- | |||
| tf | Fall Time | 6 | --- | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 814 | --- | pF | |
| Coss | Output Capacitance | 498 | --- | |||
| Crss | Reverse Transfer Capacitance | 41 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,6 | VG=VD=0V , Force Current | --- | 30 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| trr | Reverse Recovery Time | IF=20A , di/dt=100A/s , TJ=25 | 15 | --- | nS | |
| Qrr | Reverse Recovery Charge | 25 | --- | nC | ||
2410121655_HUASHUO-HSBA3052_C508835.pdf
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