PNP Transistor SOT89 3L Package Featuring High Diode PXT8550 for Electronic Applications
Key Attributes
Model Number:
PXT8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
PXT8550
Package:
SOT-89-3L
Product Description
Product Overview
The PXT8550 is a PNP transistor in a SOT-89-3L plastic-encapsulated package. It serves as a compliment to the PXT8050 and is designed for various electronic applications requiring high-performance transistor characteristics.
Product Attributes
- Brand: HIGH DIODE SEMICONDUCTOR
- Package Type: SOT-89-3L
- Molding Compound: Green
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions | Min | Max |
| MAXIMUM RATINGS | Collector-Base Voltage (VCBO) | -40 | V | |||
| Collector-Emitter Voltage (VCEO) | -25 | V | ||||
| Emitter-Base Voltage (VEBO) | -5 | V | ||||
| Collector Current (IC) -Continuous | -1.5 | A | ||||
| Collector Power Dissipation (PC) | 0.5 | W | ||||
| ELECTRICAL CHARACTERISTICS | Collector-Base Breakdown Voltage (V(BR)CBO) | -40 | V | IC = -100A, IE=0 | -40 | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | -25 | V | IC = -0.1mA, IB=0 | -25 | ||
| Emitter-Base Breakdown Voltage (V(BR)EBO) | -5 | V | IE = -100A, IC=0 | -5 | ||
| Collector Cut-off Current (ICBO) | -0.1 | A | CB V = -40 V,IE=0 | -0.1 | ||
| Collector Cut-off Current (ICEO) | -0.1 | A | CE V = -20V, IB=0 | -0.1 | ||
| Emitter Cut-off Current (IEBO) | -0.1 | A | EB V = -5V, IC=0 | -0.1 | ||
| DC Current Gain (hFE(1)) | 200 - 350 | CE V = -1V, IC= -100mA | 200 | 350 | ||
| DC Current Gain (hFE(2)) | 40 | CE V = -1V, IC= -800mA | 40 | |||
| ELECTRICAL CHARACTERISTICS (cont.) | Collector-Emitter Saturation Voltage (VCE(sat)) | -0.5 | V | CI =-800mA, IB= -80mA | -0.5 | |
| Base-Emitter Saturation Voltage (VBE(sat)) | -1.2 | V | CI =-800mA, IB= -80mA | -1.2 | ||
| ELECTRICAL CHARACTERISTICS (cont.) | Base-Emitter On Voltage (VBE(on)) | -1 | V | Ic=-1V,VCE=-10mA | -1 | |
| Base-Emitter Positive Favor Voltage (VBEF) | -1.55 | V | BI =-1A | -1.55 | ||
| ELECTRICAL CHARACTERISTICS (cont.) | Transition Frequency (fT) | 100 | MHz | VCE= -10V, IC= -50mA | 100 | |
| ELECTRICAL CHARACTERISTICS (cont.) | Output Capacitance (Cob) | 20 | pF | CB V =-10V,IE=0,f=1MHz | 20 | |
| THERMAL CHARACTERISTICS | Operation Junction and Storage Temperature Range (TJ,Tstg) | -55~150 | -55 | 150 | ||
| Thermal Resistance From Junction To Ambient (R JA) | 250 | /W | 250 |
2410121522_High-Diode-PXT8550_C22458625.pdf
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