Trench Technology P Channel MOSFET High Diode 3407 with Low Gate Charge and Continuous Drain Current
Key Attributes
Model Number:
3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-
RDS(on):
87mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
57pF
Number:
1 P-Channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
572pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
3407
Package:
SOT-23
Product Description
Product Overview
This P-Channel Power MOSFET, designed with Trench Technology, offers low RDS(ON), low gate charge, and low gate resistance. It is ideal for load switch and PWM applications, providing a V(BR)DSS of -30V and a continuous drain current (ID) of -4.2A at 25. The device is encapsulated in a SOT-23 plastic package.
Product Attributes
- Brand: HIGH DIODE SEMICONDUCTOR
- Package Type: SOT-23
- Technology: Trench Technology Power MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain - Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) | RDS(on)TYP | -10V | 45 | m | ||
| -4.5V | 57 | m | ||||
| Continuous Drain Current | ID | TA = 25 | -4.2 | A | ||
| Absolute Maximum Ratings | ||||||
| Drain - Source Voltage | VDS | (TA = 25 unless otherwise noted) | -30 | V | ||
| Gate - Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID1,5 | TA = 25 | -4.2 | A | ||
| Pulsed Drain Current | IDM2 | -16 | A | |||
| Power Dissipation | PD4,5 | TA = 25 | 1.4 | W | ||
| Thermal Resistance Junction to Ambient | RJA5 | 89 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~ | +150 | ||
| Electrical Characteristics | ||||||
| Drain - Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V | -1 | A | ||
| Gate - Body Leakage Current | IGSS | VGS = 20V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250A | -1 | -1.6 | -3 | V |
| Drain-source On-resistance | RDS(on) | VGS = -10V, ID = -4.1A | 45 | 60 | m | |
| VGS = -4.5V, ID = -3A | 57 | 87 | m | |||
| Forward Transconductance | gFS | VDS = -5V, ID = -4A | 5 | S | ||
| Input Capacitance | Ciss | VDS = -15V, VGS = 0V, f = 1MHz | 572 | pF | ||
| Output Capacitance | Coss | 65 | pF | |||
| Reverse Transfer Capacitance | Crss | 57 | pF | |||
| Total Gate Charge | Qg | VDS = -15V, VGS = -10V, ID = -4.1A | 10 | nC | ||
| Gate-source Charge | Qgs | 2 | nC | |||
| Gate-drain Charge | Qgd | 3.4 | nC | |||
| Turn-on Delay Time | td(on) | VDD = -15V, VGS = -10V, RL = 3.65, RG = 3 | 8 | ns | ||
| Turn-on Rise Time | tr | 6.2 | ns | |||
| Turn-off Delay Time | td(off) | 25 | ns | |||
| Turn-off Fall Time | tf | 10 | ns | |||
| Diode Forward Voltage | VSD3 | VGS = 0V, IS = -2A | 1.2 | V | ||
Package Dimensions (SOT-23)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0 | 0.100 | 0 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.150 | 1.500 | 0.045 | 0.059 |
| E1 | 2.250 | 2.650 | 0.089 | 0.104 |
| e | 0.950TYP | 0.037TYP | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.550REF | 0.022REF | ||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| 0 | 8 | 0 | 8 | |
Note: Device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C.
2410121331_High-Diode-3407_C22458620.pdf
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