Power Management MOSFET HUASHUO HSU55N02 N Channel Device with High Cell Density and RoHS Compliance
Key Attributes
Model Number:
HSU55N02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
55A
RDS(on):
8.6mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
125pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
29W
Input Capacitance(Ciss):
2.25nF@10V
Gate Charge(Qg):
23nC@4.5V
Mfr. Part #:
HSU55N02
Package:
TO-252
Product Description
Product Overview
The HSU55N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for power management and battery protection applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 55 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 40 | A | |||
| IDM | Pulsed Drain Current2 | 220 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 135 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 29 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | --- | --- | 62 | /W | |
| RJC | Thermal Resistance Junction-Case1 | --- | --- | 4.0 | /W | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25, ID=1mA | --- | 0.028 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | --- | 5.3 | 7.0 | m |
| VGS=2.5V , ID=15A | --- | 6.5 | 8.6 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | --- | 0.9 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -6.16 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=20V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=20V , VGS=0V , TJ=55 | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=10V , ID=20A | 10 | --- | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.2 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=10V , ID=20A | --- | 23 | --- | nC |
| Qgs | Gate-Source Charge | --- | 4.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 7.5 | --- | ||
| td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=3.3 ID=15A | --- | 15 | --- | ns |
| tr | Rise Time | --- | 33 | --- | ||
| td(off) | Turn-Off Delay Time | --- | 44 | --- | ||
| tf | Fall Time | --- | 95 | --- | ||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | --- | 2250 | --- | pF |
| Coss | Output Capacitance | --- | 200 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 125 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 55 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 220 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=20A , TJ=25 | --- | --- | 1.0 | V |
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/s , TJ=25 | --- | 12 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 2.6 | --- | nC | |
Notes:
1. Tested on a surface-mounted 1 inch² FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. EAS data shows Max. rating. Test condition: VDD=10V, VGS=10V, L=0.5mH.
4. Power dissipation is limited by 175 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410122016_HUASHUO-HSU55N02_C22359247.pdf
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